MT29F512G08CECBBJ4-5M:B

Product Overview

Category

MT29F512G08CECBBJ4-5M:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CECBBJ4-5M:B offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F512G08CECBBJ4-5M:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F512G08CECBBJ4-5M:B is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Detailed Pin Configuration

The MT29F512G08CECBBJ4-5M:B follows a standard pin configuration for NAND flash memory devices. The specific pin layout may vary depending on the manufacturer, but typically includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Error Correction Code (ECC): The product incorporates advanced ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: MT29F512G08CECBBJ4-5M:B utilizes wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.
• Bad Block Management: This NAND flash memory employs a bad block management system to identify and isolate defective blocks, preventing data corruption.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick read and write operations.
• Reliable performance ensures consistent data access.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to lower-capacity storage options.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F512G08CECBBJ4-5M:B operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, each consisting of a floating-gate transistor, to store data. When a voltage is applied, electrons are trapped in the floating gate, representing a binary value (0 or 1). These stored charges can be read or modified by applying appropriate voltages to the memory cells.

Detailed Application Field Plans

The MT29F512G08CECBBJ4-5M:B finds applications in various fields, including: - Consumer electronics: Smartphones, tablets, digital cameras, portable media players. - Computing: Solid-state drives (SSDs), embedded systems, industrial computers. - Automotive: Infotainment systems, navigation devices, advanced driver-assistance systems (ADAS). - Networking: Routers, switches, network storage devices.

Detailed and Complete Alternative Models

• MT29F512G08CECBBJ4-5M:A
• MT29F512G08CECBBJ4-5M:C
• MT29F512G08CECBBJ4-5M:D

These alternative models offer similar specifications and functionality to the MT29F512G08CECBBJ4-5M:B, providing options for different customer requirements and compatibility with various systems.

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