MT29F512G08AUCBBH8-6IT:B

Product Overview

Category

MT29F512G08AUCBBH8-6IT:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08AUCBBH8-6IT:B offers a storage capacity of 512 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.
• Compact package: The MT29F512G08AUCBBH8-6IT:B comes in a small form factor, making it suitable for space-constrained devices.

Package and Quantity

The MT29F512G08AUCBBH8-6IT:B is available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F512G08AUCBBH8-6IT:B
• Memory Type: NAND Flash
• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)

Detailed Pin Configuration

The MT29F512G08AUCBBH8-6IT:B has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE# (Chip Enable): Enables or disables the device
4. RE# (Read Enable): Activates read operation
5. WE# (Write Enable): Activates write operation
6. CLE (Command Latch Enable): Latches command inputs
7. ALE (Address Latch Enable): Latches address inputs
8. WP# (Write Protect): Write protection control
9. R/B# (Ready/Busy): Indicates device status
10. DQ0-DQ7 (Data Input/Output): Bidirectional data bus

Functional Features

• High-speed data transfer: The MT29F512G08AUCBBH8-6IT:B offers fast read and write speeds, facilitating efficient data storage and retrieval.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This feature evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: The device automatically detects and manages bad blocks, enhancing overall performance and endurance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Relatively higher cost compared to other storage options
• Limited endurance due to the finite number of program/erase cycles

Working Principles

The MT29F512G08AUCBBH8-6IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. During writing, the charge is adjusted to represent the desired data.

Detailed Application Field Plans

The MT29F512G08AUCBBH8-6IT:B finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
2. Automotive: Integrated into infotainment systems, navigation devices, and advanced driver-assistance systems (ADAS) for storing critical data.
3. Industrial Automation: Employed in industrial control systems, robotics, and embedded devices for reliable and high-capacity data storage.
4. Enterprise Storage: Utilized in solid-state drives (SSDs) for enterprise-level data centers, providing fast and reliable storage solutions.

Alternative Models

• MT29F256G08AUCBBH8-6IT:B: 256 GB NAND flash memory with similar specifications.
• MT29F1T08CUCBBH8-6IT:B: 1 terabyte (TB) NAND flash memory with comparable features.
• MT29F512G16CUCBBH8-6IT:B: 512 GB NAND