MT29F4T08EYHBBG9-3RES:B TR

Product Overview

Category

MT29F4T08EYHBBG9-3RES:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F4T08EYHBBG9-3RES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT29F4T08EYHBBG9-3RES:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: BGA
• Pin Count: 63

Detailed Pin Configuration

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. A24
28. A25
29. ALE
30. CLE
31. RE#
32. WE#
33. WP#
34. R/B#
35. CE#
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. DQS0
45. DQS1
46. DQS2
47. DQS3
48. DM0
49. DM1
50. DM2
51. DM3
52. VREF
53. NC
54. NC
55. NC
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. NC
63. NC

Functional Features

• High-speed data transfer: MT29F4T08EYHBBG9-3RES:B TR offers fast read and write speeds, enabling quick access to stored data.
• Error correction: This product incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The NAND flash memory employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining overall performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Compact size
• Low power consumption
• High-speed data transfer
• Reliable data storage

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

MT29F4T08EYHBBG9-3RES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells are organized into pages and blocks, with each cell capable of storing multiple bits of information. When data is written, the memory controller applies voltage to the appropriate memory cells, changing their electrical state to represent the desired data. Reading data involves sensing the electrical state of the memory cells and converting it back into digital information.

Detailed Application Field Plans

MT29F4T08EYHBBG9-3RES:B TR finds applications in various electronic devices, including: 1. Smartphones 2. Tablets 3. Digital cameras 4. Solid-state drives (SSDs) 5. Portable media players 6. Automotive infotainment systems 7. Industrial control systems 8. Medical devices

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT
2. MT29F4G08ABAEAWP