MT29F4T08EYHBBG9-3R:B TR

Product Overview

Category

MT29F4T08EYHBBG9-3R:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Shock and vibration resistant

Package

MT29F4T08EYHBBG9-3R:B TR is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and reliably, enhancing the performance and functionality of electronic devices.

Packaging/Quantity

MT29F4T08EYHBBG9-3R:B TR is typically packaged in reels or trays, with each package containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Read and Program Operations
• Block Erase Operation
• Random Access to Memory Cells
• Error Correction Code (ECC) Support
• Bad Block Management
• Wear-Leveling Algorithm

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast read and write speeds enable quick data access and transfer.
• Low power consumption helps in extending battery life.
• Compact package size facilitates integration into small electronic devices.
• Reliable data retention ensures long-term data integrity.
• Shock and vibration resistance make it suitable for rugged environments.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to traditional hard disk drives.
• Susceptible to electrical interference and data corruption in extreme conditions.

Working Principles

MT29F4T08EYHBBG9-3R:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the charge level on a floating gate transistor. The data is accessed by applying appropriate voltage levels to the control pins and reading or writing the stored charge levels.

Detailed Application Field Plans

MT29F4T08EYHBBG9-3R:B TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT
2. MT29F4G08ABADAWP-ET
3. MT29F4G08ABADAWP-AT
4. MT29F4G08ABADAWP-CT

These alternative models offer similar specifications and functionality to MT29F4T08EYHBBG9-3R:B TR, providing flexibility in choosing the most suitable NAND flash memory for specific applications.

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