MT29F4T08EYCBBG9-37ES:B TR

Product Overview

Category

MT29F4T08EYCBBG9-37ES:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F4T08EYCBBG9-37ES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT29F4T08EYCBBG9-37ES:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400Mbps
• Package Type: TSOP

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A15 - Address inputs
4. CE - Chip enable
5. WE - Write enable
6. RE - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. WP - Write protect
10. R/B - Ready/busy status
11. DQ0-DQ7 - Data input/output

Functional Features

• High-speed read and write operations
• Error correction code (ECC) for data integrity
• Block erase and program operations
• Wear-leveling algorithm for extended lifespan
• Bad block management
• Power-saving features

Advantages

• Large storage capacity allows for storing a vast amount of data
• High-speed data transfer enables quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Compact size facilitates integration into small form factor devices
• Reliable data storage ensures data integrity and longevity

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

MT29F4T08EYCBBG9-37ES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the manipulation of the charge on the floating gates.

Detailed Application Field Plans

MT29F4T08EYCBBG9-37ES:B TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT: 4GB NAND Flash Memory, TSOP package, Parallel interface.
2. MT29F4G08ABBDAWP-IT:E: 4GB NAND Flash Memory, TSOP package, Parallel interface, extended temperature range.
3. MT29F4G08ABADAWP-IT:E: 4GB NAND Flash Memory, TSOP package, Parallel interface, extended temperature range, with ECC.

These alternative models offer similar specifications and functionality to MT29F4T08EYCBBG9-37ES:B TR, providing options for different application requirements.

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