MT29F4T08EYCBBG9-37:B TR

Product Overview

Category

The MT29F4T08EYCBBG9-37:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Wide operating temperature range

Package

The MT29F4T08EYCBBG9-37:B TR is packaged in a small form factor, typically in a surface-mount technology (SMT) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of this product lies in its ability to store large amounts of data reliably and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

The MT29F4T08EYCBBG9-37:B TR is usually sold in reels or trays, with quantities varying based on customer requirements. Common packaging options include 1000 pieces per reel or tray.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

Pin Name | Description --- | --- VCC | Power supply voltage GND | Ground CE | Chip enable CLE | Command latch enable ALE | Address latch enable WE | Write enable RE | Read enable R/B | Ready/busy status DQ[0:7] | Data input/output lines WP | Write protect

Functional Features

• High-speed data transfer
• Error correction capability
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan
• Bad block management
• Power-saving features

Advantages

• Large storage capacity allows for storing a vast amount of data
• Fast read and write speeds enable quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Compact package size facilitates integration into small form factor devices
• Reliable data retention ensures data integrity over time
• Wide operating temperature range enables usage in various environments

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Higher cost per gigabyte compared to traditional hard disk drives
• Susceptible to physical damage from electrostatic discharge (ESD)
• Requires specialized controllers for optimal performance

Working Principles

The MT29F4T08EYCBBG9-37:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltage levels to the control pins and reading or writing the data through the I/O pins.

Detailed Application Field Plans

The MT29F4T08EYCBBG9-37:B TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT: 4GB NAND Flash Memory, Parallel Interface, SMT Package
2. MT29F4G08ABAEAWP-IT: 4GB NAND Flash Memory, Parallel Interface, SMT Package
3. MT29F4G08ABADAWP-ET: 4GB NAND Flash Memory, Parallel Interface, SMT Package
4. MT29F4G08ABAEAWP-ET: 4GB NAND Flash Memory, Parallel Interface, SMT Package

These alternative models offer similar specifications and functionality to the MT29F4T08EYCBBG9-37:B TR.

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