MT29F4T08CTHBBM5-3RES:B TR

Product Overview

Category

The MT29F4T08CTHBBM5-3RES:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Durable and reliable

Package

The MT29F4T08CTHBBM5-3RES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

The MT29F4T08CTHBBM5-3RES:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400Mbps
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data inputs/outputs
8. R/B - Ready/busy status
9. WP - Write protect
10. CLE - Command latch enable
11. ALE - Address latch enable

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Bad block management
• Block erase and program operations
• Read and write protection options

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Low power consumption
• Compact size
• Reliable and durable

Disadvantages

• Limited erase/program cycles
• Susceptible to physical damage if mishandled

Working Principles

The MT29F4T08CTHBBM5-3RES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells can be electrically programmed and erased, allowing for the storage and retrieval of digital information.

When data is written to the memory, it is stored by applying electrical charges to specific memory cells. To read the data, the charges are detected and converted back into digital information. The erase operation clears the charges from the memory cells, making them ready for new data storage.

Detailed Application Field Plans

The MT29F4T08CTHBBM5-3RES:B TR finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT: 4GB NAND flash memory with advanced wear-leveling algorithms.
2. MT29F4G16ABBDAH4-IT:E: 4GB NAND flash memory with enhanced data transfer rates.
3. MT29F4T16ABBEAH4-IT: 4GB NAND flash memory with extended temperature range.

These alternative models offer similar storage capacities and functionalities, catering to different application requirements.

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