MT29F4T08CTHBBM5-3R:B TR

Product Overview

Category

MT29F4T08CTHBBM5-3R:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F4T08CTHBBM5-3R:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly, while occupying minimal physical space.

Packaging/Quantity

MT29F4T08CTHBBM5-3R:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. CLE - Command Latch Enable
5. ALE - Address Latch Enable
6. RE - Read Enable
7. WE - Write Enable
8. R/B - Ready/Busy
9. DQ0-DQ7 - Data Input/Output

Functional Features

• Block Erase and Program Operations
• Random Access Read Operation
• Error Correction Code (ECC) Support
• Wear-Leveling Algorithm for Enhanced Lifespan
• Bad Block Management

Advantages

• High-speed data transfer enables faster device performance.
• Non-volatile memory ensures data retention even when power is disconnected.
• Large storage capacity allows for storing a vast amount of data.
• Compact size facilitates integration into small electronic devices.
• Low power consumption prolongs battery life.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per gigabyte compared to traditional hard drives.
• Susceptible to physical damage if mishandled.

Working Principles

MT29F4T08CTHBBM5-3R:B TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends commands and addresses to the memory chip, enabling the necessary operations.

Detailed Application Field Plans

MT29F4T08CTHBBM5-3R:B TR finds applications in various electronic devices, including: 1. Smartphones and tablets for data storage and app execution. 2. Digital cameras for storing photos and videos. 3. Solid-state drives (SSDs) for high-performance data storage in computers and servers. 4. Portable media players for storing and playing multimedia content. 5. Automotive systems for data logging and infotainment purposes.

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT: 4GB NAND Flash Memory with different package and interface options.
2. MT29F4G16ABADAWP-IT: 4GB NAND Flash Memory with higher capacity and similar specifications.
3. MT29F4T16ABADAWP-IT: 4GB NAND Flash Memory with different pin configuration and interface options.

(Note: The above alternative models are provided for reference and may vary in availability depending on the manufacturer.)

Word count: 531 words