MT29F4T08CTHBBM5-3C:BTR

Product Overview

Category

The MT29F4T08CTHBBM5-3C:BTR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Wide operating temperature range

Package

The MT29F4T08CTHBBM5-3C:BTR is available in a small form factor package, making it suitable for space-constrained applications. It is commonly packaged in a Ball Grid Array (BGA) package.

Essence

The essence of this product lies in its ability to store large amounts of data reliably and efficiently, while offering fast access times and low power consumption.

Packaging/Quantity

Typically, the MT29F4T08CTHBBM5-3C:BTR is supplied in reels or trays, depending on the manufacturer's packaging standards. The quantity per reel or tray may vary, but it is commonly available in quantities of 1000 units.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)
• Package Type: BGA
• Pin Count: 48

Detailed Pin Configuration

1. VCC
2. GND
3. ALE
4. CLE
5. CE#
6. RE#
7. WE#
8. R/B#
9. WP#
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation
• Block Erase Operation
• Random Data Read Operation
• Cache Read Operation
• Multiplane Operation
• Bad Block Management
• Wear Leveling

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enable quick access to stored data.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size facilitates integration into small form factor devices.
• Reliable data retention ensures data integrity over time.
• Wide operating temperature range enables usage in various environments.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to some alternative storage solutions.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT29F4T08CTHBBM5-3C:BTR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells are made up of floating-gate transistors that can retain charge even when power is removed. The data is stored by trapping or releasing electrons in the floating gate, representing binary values.

During operation, the controller sends commands to the NAND flash memory chip to perform various operations such as reading, writing, erasing, and data management. These operations are executed by manipulating voltages on specific pins to control the flow of electrons within the memory cells.

Detailed Application Field Plans

The MT29F4T08CTHBBM5-3C:BTR is widely used in the following applications:

1. Smartphones and tablets for storing operating systems, applications, and user data.
2. Digital cameras for storing high-resolution photos and videos.
3. Solid-state drives (SSDs) for high-speed data storage in laptops and desktop computers.
4. Industrial automation systems for data logging and program storage.
5. Automotive infotainment systems for multimedia storage and playback.

Detailed and Complete Alternative Models

1. Samsung K9GAG08U0E
2. Toshiba THGBM5G6A2JBAIR