MT29F4T08CTHBBM5-3C:B

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Model: MT29F4T08CTHBBM5-3C:B
• Memory Type: NAND Flash
• Capacity: 4GB
• Organization: 8 bits x 4,096 pages x 2,112 blocks
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Endurance: 3,000 Program/Erase cycles
• Data Retention: 10 years

Detailed Pin Configuration

The MT29F4T08CTHBBM5-3C:B has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. WE#
11. RE#
12. CLE
13. ALE
14. CE#
15. R/B#
16. WP#
17. VSSQ
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Toggle Mode 2.0 interface for high-speed data transfer
• Error Correction Code (ECC) for data integrity
• Block Management for efficient memory utilization
• Wear-Leveling algorithm to evenly distribute write/erase cycles
• Bad Block Management for reliable operation

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for quick data access - Non-volatile memory retains data even without power - Toggle Mode 2.0 interface enables high-speed data transfer

Disadvantages: - Limited endurance with a maximum of 3,000 Program/Erase cycles - Relatively higher cost compared to other memory technologies

Working Principles

The MT29F4T08CTHBBM5-3C:B is based on NAND flash memory technology. It stores data in a series of memory cells organized in pages and blocks. When data needs to be written, the memory controller sends the appropriate signals to the chip's pins, specifying the target address and data to be stored. The chip then performs the necessary operations to program the data into the memory cells. Similarly, when data needs to be read, the chip retrieves the requested data from the memory cells and sends it back to the memory controller.

Detailed Application Field Plans

The MT29F4T08CTHBBM5-3C:B is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-State Drives (SSDs) - USB Flash Drives - Digital Cameras - Mobile Phones - Tablets - Industrial Control Systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT:E - 4GB NAND Flash Memory, TSOP package
2. S34ML04G200TFI000 - 4GB NAND Flash Memory, BGA package
3. H27U4G8F2ETR-BC - 4GB NAND Flash Memory, TSOP package
4. IS43TR16512AL-125KBLI - 4GB DDR3 SDRAM, BGA package
5. MX25L4006EZNI-12G - 4MB NOR Flash Memory, SOP package

These alternative models offer similar storage capacities and functionalities to the MT29F4T08CTHBBM5-3C:B, but may differ in terms of package type, interface, or specific features.

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