MT29F4T08CTCBBM5-37ES:B TR

Product Overview

Category

MT29F4T08CTCBBM5-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F4T08CTCBBM5-37ES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic applications.

Packaging/Quantity

MT29F4T08CTCBBM5-37ES:B TR is typically packaged in reels or trays, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 37MB/s (Read), Up to 20MB/s (Write)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A11 - Address inputs
4. CE - Chip enable
5. WE - Write enable
6. RE - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. WP - Write protect
10. R/B - Ready/Busy status
11. DQ0-DQ7 - Data input/output

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of entire blocks of data.
• Read Operation: Facilitates the retrieval of stored data.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High-speed data transfer
• Large storage capacity
• Compact size
• Low power consumption
• Reliable data retention
• Cost-effective solution for mass storage

Disadvantages

• Limited endurance compared to other types of memory
• Slower write speeds compared to some alternatives
• Susceptible to physical damage if mishandled

Working Principles

MT29F4T08CTCBBM5-37ES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information, allowing for high-density data storage. The data is written and read by applying appropriate voltage levels to the memory cells through the pin configuration.

Detailed Application Field Plans

MT29F4T08CTCBBM5-37ES:B TR finds applications in various electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT:E - 4GB NAND Flash Memory, SLC, Parallel Interface
2. MT29F4G08ABADAWP-IT:E - 4GB NAND Flash Memory, MLC, Parallel Interface
3. MT29F4G08ABAEAWP-IT:J - 4GB NAND Flash Memory, SLC, Parallel Interface
4. MT29F4G08ABADAWP-IT:J - 4GB NAND Flash Memory, MLC, Parallel Interface

These alternative models offer similar storage capacity and functionality but may differ in terms of memory type (SLC or MLC) and interface options.

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