MT29F4G16ABBFAH4-AATES:F TR

Product Overview

Category

The MT29F4G16ABBFAH4-AATES:F TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABBFAH4-AATES:F TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory provides reliable data storage with built-in error correction mechanisms.
• Compact package: The MT29F4G16ABBFAH4-AATES:F TR comes in a small form factor, making it suitable for space-constrained applications.
• Low power consumption: It operates at low power levels, contributing to energy efficiency in portable devices.

Packaging/Quantity

The MT29F4G16ABBFAH4-AATES:F TR is typically packaged in surface-mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 gigabits (4 Gb)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F4G16ABBFAH4-AATES:F TR has a specific pin configuration for proper integration into electronic devices. The pinout diagram is as follows:

[Pin Diagram]

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of entire blocks of data.
• Read Operation: Facilitates the retrieval of stored data.
• Error Correction Code (ECC): Provides error detection and correction capabilities, ensuring data integrity.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with built-in error correction mechanisms.
• Compact package size suitable for space-constrained applications.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit compared to traditional hard disk drives.

Working Principles

The MT29F4G16ABBFAH4-AATES:F TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When data is written, the charge is adjusted accordingly. Reading data involves measuring the electrical charge in each cell to determine the stored information.

Detailed Application Field Plans

The MT29F4G16ABBFAH4-AATES:F TR finds application in various electronic devices that require non-volatile data storage. Some specific application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• Model 1: ABC1234-XYZ

  • Storage Capacity: 8 gigabits (8 Gb)
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 300 megabytes per second (MB/s)

• Model 2: DEF5678-WXY

  • Storage Capacity: 2 gigabits (2 Gb)
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 150 megabytes per second (MB/s)

• Model 3: GHI9012-ZAB

  • Storage Capacity: 16 gigabits (16 Gb)
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 250 megabytes per