MT29F4G16ABBDAH4-AIT:D TR

Product Overview

Category

The MT29F4G16ABBDAH4-AIT:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABBDAH4-AIT:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory provides reliable and durable data storage, ensuring data integrity over time.
• Low power consumption: The MT29F4G16ABBDAH4-AIT:D TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G16ABBDAH4-AIT:D TR is typically packaged in surface-mount technology (SMT) packages. The exact packaging type and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT

Detailed Pin Configuration

The MT29F4G16ABBDAH4-AIT:D TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines
9. NC: No connection (reserved pin)
10. VSS: Ground

Functional Features

• Page Program: The MT29F4G16ABBDAH4-AIT:D TR supports page programming, allowing data to be written in small increments.
• Block Erase: It provides block erase functionality, enabling the deletion of large chunks of data at once.
• Random Access: This NAND flash memory allows for random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors that may occur during data storage and retrieval processes.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures quick read and write operations.
• Reliable performance ensures data integrity over time.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F4G16ABBDAH4-AIT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the manipulation of the stored charges.

Detailed Application Field Plans

The MT29F4G16ABBDAH4-AIT:D TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some of the key application fields include:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Digital Cameras: Enables storage of high-resolution photos and videos.
3. Solid-State Drives (SSDs): Provides fast and reliable storage for computer systems.
4. Automotive Electronics: Used in infotainment systems, navigation devices, and data logging applications.
5. Industrial Control Systems: Enables data storage in automation and control systems.

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT
2. MT29F4G08ABBDAH4-IT
3. MT29F4G08ABADAH4-IT
4. MT29F4G08ABBDAWP-IT
5. MT29F4G08ABADAWP:D TR

These alternative models offer similar specifications and functionality to the MT29F4G16ABBDAH4-AIT:D TR, providing options for different storage capacities or package types.

*Note: The above list is not exhaustive and may vary depending on the manufacturer