Micron Technology Inc.
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MT29F4G16ABAFAH4-AATES:F TR

MT29F4G16ABAFAH4-AATES:F TR

Basic Information Overview

  • Category: Memory Product
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (4 gigabits)
    • NAND Flash technology
  • Package: Surface Mount Technology (SMT)
  • Essence: Reliable and high-performance data storage solution
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Part Number: MT29F4G16ABAFAH4-AATES:F TR
  • Memory Type: NAND Flash
  • Capacity: 4 gigabits (512 megabytes)
  • Organization: 512M x 8 bits
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-ball VFBGA

Detailed Pin Configuration

The MT29F4G16ABAFAH4-AATES:F TR has a 48-ball VFBGA package with the following pin configuration:

  1. ALE (Address Latch Enable)
  2. CLE (Command Latch Enable)
  3. CE (Chip Enable)
  4. RE (Read Enable)
  5. WE (Write Enable)
  6. R/B (Ready/Busy)
  7. WP (Write Protect)
  8. VCC (Power Supply)
  9. GND (Ground)
  10. DQ0-DQ7 (Data Input/Output)

Functional Features

  • High-speed data transfer
  • Error correction capability
  • Wear-leveling algorithm for extended lifespan
  • Block management for efficient data organization
  • Bad block management for improved reliability
  • Power-saving features for reduced energy consumption

Advantages

  • Large storage capacity
  • Fast data transfer rates
  • Reliable and durable
  • Low power consumption
  • Suitable for various applications

Disadvantages

  • Higher cost compared to some other memory options
  • Limited write endurance compared to other types of memory

Working Principles

The MT29F4G16ABAFAH4-AATES:F TR operates based on NAND Flash technology. It stores data in a series of memory cells organized in blocks. Each block consists of multiple pages, and each page contains multiple sectors. Data can be written to and read from these memory cells using specific commands and control signals.

Detailed Application Field Plans

The MT29F4G16ABAFAH4-AATES:F TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial automation systems

Detailed and Complete Alternative Models

  • MT29F4G08ABAEAWP-IT: 4 gigabit NAND Flash memory with different package type (TSOP)
  • MT29F4G16ABADAWP-IT: 4 gigabit NAND Flash memory with different organization (1G x 4 bits)
  • MT29F4G16ABBDAWP-IT: 4 gigabit NAND Flash memory with different interface (Serial Peripheral Interface)

Note: This entry provides an overview of the MT29F4G16ABAFAH4-AATES:F TR memory product. For more detailed information, please refer to the manufacturer's datasheet or technical documentation.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F4G16ABAFAH4-AATES:F TR v technických řešeních

  1. Question: What is the capacity of the MT29F4G16ABAFAH4-AATES:F TR?
    Answer: The MT29F4G16ABAFAH4-AATES:F TR has a capacity of 4 gigabytes (GB).

  2. Question: What is the interface type supported by this memory module?
    Answer: This memory module supports the NAND Flash interface.

  3. Question: What is the operating voltage range for the MT29F4G16ABAFAH4-AATES:F TR?
    Answer: The operating voltage range for this module is typically between 2.7V and 3.6V.

  4. Question: Can this memory module be used in industrial applications?
    Answer: Yes, the MT29F4G16ABAFAH4-AATES:F TR is designed to meet the requirements of industrial applications.

  5. Question: What is the maximum data transfer rate supported by this module?
    Answer: The maximum data transfer rate for this module is typically 50 megabytes per second (MB/s).

  6. Question: Is this memory module compatible with other NAND Flash devices?
    Answer: Yes, the MT29F4G16ABAFAH4-AATES:F TR is designed to be compatible with other NAND Flash devices.

  7. Question: Does this module support wear-leveling algorithms?
    Answer: Yes, this memory module supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles.

  8. Question: Can this memory module withstand extreme temperatures?
    Answer: Yes, the MT29F4G16ABAFAH4-AATES:F TR is designed to operate reliably in a wide temperature range, including extreme temperatures.

  9. Question: What is the typical lifespan of this memory module?
    Answer: The typical lifespan of this module is specified by the number of program/erase cycles, which is typically in the range of thousands to tens of thousands.

  10. Question: Is this memory module suitable for automotive applications?
    Answer: Yes, the MT29F4G16ABAFAH4-AATES:F TR is designed to meet the requirements of automotive applications, including extended temperature ranges and high reliability.