Micron Technology Inc.
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MT29F4G16ABADAWP-IT:D TR

MT29F4G16ABADAWP-IT:D TR

Product Overview

Category

MT29F4G16ABADAWP-IT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F4G16ABADAWP-IT:D TR offers a storage capacity of 4 gigabits (4 Gb).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G16ABADAWP-IT:D TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

  • Manufacturer: Micron Technology Inc.
  • Part Number: MT29F4G16ABADAWP-IT:D TR
  • Memory Type: NAND Flash
  • Density: 4 Gb
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)
  • Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F4G16ABADAWP-IT:D TR is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. WP#
  8. R/B#
  9. I/O0
  10. I/O1
  11. I/O2
  12. I/O3
  13. I/O4
  14. I/O5
  15. I/O6
  16. I/O7
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Read/Program/Erase: The MT29F4G16ABADAWP-IT:D TR supports page-level read, program, and erase operations, allowing for efficient data management.
  • Block Management: It incorporates advanced block management techniques to optimize the lifespan and performance of the NAND flash memory.
  • Error Correction: The product utilizes error correction codes (ECC) to detect and correct errors, ensuring data integrity.
  • Wear Leveling: It implements wear leveling algorithms to distribute write operations evenly across the memory cells, preventing premature cell failure.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Limited endurance: NAND flash memory has a limited number of program/erase cycles before it starts to degrade.
  • Susceptible to electrical interference: NAND flash memory can be affected by electrical noise, which may lead to data corruption.

Working Principles

The MT29F4G16ABADAWP-IT:D TR operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges in the floating gate of the memory cell. To read or write data, specific voltage levels are applied to the control gates and bit lines of the memory cells.

Detailed Application Field Plans

The MT29F4G16ABADAWP-IT:D TR finds applications in various electronic devices, including: 1. Smartphones 2. Tablets 3. Digital cameras 4. Solid-state drives (SSDs) 5. Portable media players 6. Automotive infotainment systems 7. Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F4G08ABADAWP-IT:D TR - 4 Gb NAND Flash Memory, TSOP package, parallel interface.
  2. MT29F4G16ABADAWP-IT:E

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F4G16ABADAWP-IT:D TR v technických řešeních

1. What is the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR has a storage capacity of 4 gigabytes (GB).

3. What is the interface used by the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR uses a standard NAND flash interface.

4. What are some common applications of the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR is commonly used in various technical solutions such as embedded systems, solid-state drives (SSDs), industrial automation, and automotive electronics.

5. What is the operating voltage range of the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR operates within a voltage range of 2.7V to 3.6V.

6. What is the data transfer rate of the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR supports a maximum data transfer rate of up to 200 megabytes per second (MB/s).

7. Does the MT29F4G16ABADAWP-IT:D TR support wear-leveling algorithms? Yes, the MT29F4G16ABADAWP-IT:D TR supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells, prolonging the lifespan of the NAND flash.

8. Can the MT29F4G16ABADAWP-IT:D TR withstand extreme temperatures? Yes, the MT29F4G16ABADAWP-IT:D TR is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

9. Is the MT29F4G16ABADAWP-IT:D TR compatible with various operating systems? Yes, the MT29F4G16ABADAWP-IT:D TR is compatible with popular operating systems such as Linux, Windows, and embedded real-time operating systems (RTOS).

10. What is the expected lifespan of the MT29F4G16ABADAWP-IT:D TR? The MT29F4G16ABADAWP-IT:D TR has a typical endurance rating of 3,000 program/erase cycles, ensuring reliable performance over an extended period of time.