MT29F4G16ABADAWP-AIT:D TR

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Model: MT29F4G16ABADAWP-AIT:D TR
• Memory Type: NAND Flash
• Capacity: 4GB
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. DQ0-DQ7 (Data Input/Output)
10. WP (Write Protect)
11. NC (No Connection)

(Note: The pin configuration is for illustrative purposes only. Please refer to the datasheet for the accurate pinout.)

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile memory
• Error correction capability
• Block erase and program operations
• Low power consumption

Advantages

• Large storage capacity
• Fast access speed
• Compact package size
• Wide operating temperature range
• Suitable for various applications

Disadvantages

• Limited write endurance
• Relatively higher cost compared to other memory technologies

Working Principles

MT29F4G16ABADAWP-AIT:D TR is based on NAND flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when power is removed. The memory cells are organized into blocks, which can be erased and programmed independently. The device utilizes an interface to communicate with the host system, allowing for efficient data transfer.

Detailed Application Field Plans

• Embedded systems
• Solid-state drives (SSDs)
• Consumer electronics
• Automotive applications
• Industrial control systems

Alternative Models

1. MT29F4G08ABAEAWP-IT:E TR
2. MT29F4G08ABAEAWP-IT:D TR
3. MT29F4G08ABAEAWP-IT:A TR
4. MT29F4G08ABAEAWP-IT:B TR

(Note: The alternative models listed above are similar in specifications and functionality but may differ in certain aspects. Please refer to the respective datasheets for detailed information.)

This entry provides an overview of the MT29F4G16ABADAWP-AIT:D TR memory device, including its category, use, characteristics, package, essence, packaging/quantity details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.