MT29F4G16ABADAH4-AIT:D TR

Product Overview

Category

The MT29F4G16ABADAH4-AIT:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABADAH4-AIT:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory provides reliable and durable storage, ensuring data integrity.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABADAH4-AIT:D TR is typically packaged in a surface-mount technology (SMT) package. The specific package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel or Serial
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 MB/s (depending on the interface)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration for the MT29F4G16ABADAH4-AIT:D TR can be found in the datasheet provided by the manufacturer. Please refer to the datasheet for the specific pin assignments and functions.

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level, providing flexibility in managing memory space.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory blocks, extending the product's lifespan.
• Error Correction Code (ECC): Implements error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption is ideal for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited erase/program cycles may affect the product's lifespan.
• Higher cost compared to other types of memory technologies.
• Susceptible to data loss if not properly managed or protected.

Working Principles

The MT29F4G16ABADAH4-AIT:D TR utilizes NAND flash memory technology. It stores data by trapping electric charges in a grid of memory cells. These cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. The memory controller manages these operations and ensures data integrity through error correction techniques.

Detailed Application Field Plans

The MT29F4G16ABADAH4-AIT:D TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Alternative Models

For alternative models with similar specifications and functionality, please refer to the datasheets provided by other NAND flash memory manufacturers. Some popular alternatives to the MT29F4G16ABADAH4-AIT:D TR include: - Samsung K9K8G08U0D - Micron MT29F4G08ABAEAWP - Toshiba TH58NVG5D2FTA20

Please note that the availability and specific characteristics of alternative models may vary. It is recommended to consult with manufacturers or distributors for the most up-to-date information.

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