MT29F4G16ABADAH4-AAT:D TR

Product Overview

Category

MT29F4G16ABADAH4-AAT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABADAH4-AAT:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABADAH4-AAT:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from a few hundred to several thousand units per package.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Type: Surface Mount Technology (SMT)

Detailed Pin Configuration

The MT29F4G16ABADAH4-AAT:D TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of multiple pages simultaneously, improving efficiency.
• Random Access: Provides direct access to any memory location, allowing for efficient data retrieval.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for quick read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption, suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per unit compared to traditional hard disk drives.

Working Principles

The MT29F4G16ABADAH4-AAT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves detecting the charge level in each memory cell to determine the stored information.

Detailed Application Field Plans

The MT29F4G16ABADAH4-AAT:D TR is widely used in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-AAT:D TR: 4 Gb NAND flash memory with similar specifications.
2. MT29F8G16ABADAH4-AAT:D TR: 8 Gb NAND flash memory with higher storage capacity.
3. MT29F16G32ABADAH4-AAT:D TR: 16 Gb NAND flash memory with even higher storage capacity.

These alternative models offer different storage capacities to cater to varying application requirements.

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