MT29F4G08ABBDAHC-IT:D

Product Overview

Category

The MT29F4G08ABBDAHC-IT:D belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAHC-IT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable and consistent performance over extended periods.
• Low power consumption: The MT29F4G08ABBDAHC-IT:D is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABBDAHC-IT:D is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Mbps (Megabits per second)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F4G08ABBDAHC-IT:D has a standard pin configuration with multiple pins for different functions. Here is a detailed pinout:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address input pins
4. DQ0-DQ15: Data input/output pins
5. WE#: Write enable control signal
6. CE#: Chip enable control signal
7. RE#: Read enable control signal
8. CLE: Command latch enable
9. ALE: Address latch enable
10. R/B#: Ready/Busy status output

Note: The actual pin configuration may vary depending on the specific manufacturer's implementation.

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of large blocks of memory simultaneously, improving efficiency.
• Random Access: Provides the ability to access data stored at any location within the memory array.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during data read operations.
• Wear Leveling: Implements wear leveling techniques to distribute write operations evenly across the memory cells, extending the lifespan of the chip.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for quick read and write operations.
• Reliable performance ensures data integrity.
• Low power consumption prolongs battery life.
• Compact package allows for easy integration into various devices.

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to alternative memory solutions.
• Susceptible to physical damage from electrostatic discharge (ESD) if not handled properly.

Working Principles

The MT29F4G08ABBDAHC-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a combination of charge levels. The data is written and read by applying appropriate voltage levels to the control pins and accessing specific memory addresses.

During write operations, data is programmed into the memory cells in page-sized increments. Erase operations are performed at the block level, where large blocks of memory are erased simultaneously. The chip's controller manages these operations and ensures data integrity through error correction techniques.

Detailed Application Field Plans

The MT29F4G08ABBDAHC-IT:D finds extensive application in various electronic devices that require non-volatile storage capabilities. Some of the key application fields include:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Solid-State Drives (SSDs): Provides high-speed storage for computer systems, improving overall performance.
3. Digital Cameras: Enables quick and reliable storage of high-resolution photos and videos.
4. Automotive Electronics: Used for data storage in infotainment systems, navigation units, and instrument clusters.
5. Industrial Control Systems: Utilized in embedded systems for data logging and firmware storage.

Detailed and Complete Alternative Models

1. Samsung