MT29F4G08ABBDAH4-AITX:D TR

Product Overview

Category

The MT29F4G08ABBDAH4-AITX:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAH4-AITX:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABBDAH4-AITX:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: [Insert dimensions]

Pin Configuration

The detailed pin configuration for the MT29F4G08ABBDAH4-AITX:D TR can be found in the datasheet provided by the manufacturer. Please refer to the datasheet for accurate and up-to-date information.

Functional Features

• Page Program: The MT29F4G08ABBDAH4-AITX:D TR supports page programming, allowing data to be written in small increments.
• Block Erase: It provides block erase functionality, enabling the simultaneous erasure of multiple memory blocks.
• Read and Write Operations: This NAND flash memory allows for high-speed read and write operations, facilitating efficient data access.
• Error Correction Code (ECC): It incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The product employs wear leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F4G08ABBDAH4-AITX:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. When data is written, it is stored by applying electrical charges to specific memory cells. Reading involves detecting the presence or absence of charges within the cells. Erasing is performed by removing all charges from a block of cells simultaneously.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-AITX:D TR finds extensive application in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-ITX:D TR

   • Capacity: 4 Gb
   • Interface: Parallel
   • Voltage Supply: 2.7V - 3.6V
   • Package Type: SMT

2. MT29F4G08ABBDAH4-ITX:D TR

   • Capacity: 4 Gb
   • Interface: Parallel
   • Voltage Supply: 2.7V - 3.6V
   • Package Type: SMT

3. MT29F4G08ABADAH4-AITX:D TR

   • Capacity: 4 Gb
   • Interface: Parallel
   • Voltage Supply: 2.7V - 3.6V
   • Package Type: SMT

Please note that the above alternative models are provided for reference purposes. It is recommended to consult