MT29F4G08ABADAWP-E:D TR

Product Overview

Category

MT29F4G08ABADAWP-E:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABADAWP-E:D TR offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed read and write operations, allowing for efficient data processing.
• Reliable performance: The NAND flash memory technology ensures durability and long-term data retention.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained applications.
• Low power consumption: MT29F4G08ABADAWP-E:D TR is designed to consume minimal power, enhancing battery life in portable devices.

Package and Quantity

The product is packaged in a surface-mount technology (SMT) package, which facilitates easy integration onto printed circuit boards (PCBs). It is typically sold in reels or trays containing multiple units.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F4G08ABADAWP-E:D TR can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Read/Write Operations: Allows for reading and writing data at the page level, enabling efficient data management.
• Block Erase Operations: Supports block erase operations, which facilitate the deletion of large amounts of data.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: Implements wear-leveling techniques to distribute write operations evenly across memory cells, enhancing longevity.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage for various applications.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures data integrity and long-term retention.
• Compact package facilitates integration into space-constrained devices.
• Low power consumption enhances battery life in portable electronics.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of non-volatile memory technologies.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

MT29F4G08ABADAWP-E:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. The data is accessed by applying specific voltage levels to the appropriate memory cells.

During write operations, the existing data in a memory cell is erased, and new data is programmed by modifying the charge level. Reading involves detecting the charge level in each memory cell to retrieve the stored information.

Detailed Application Field Plans

MT29F4G08ABADAWP-E:D TR finds application in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. 4. Automotive electronics for storing firmware, maps, and multimedia content. 5. Industrial control systems for data logging and firmware storage.

Alternative Models

Several alternative models with similar specifications and functionality to MT29F4G08ABADAWP-E:D TR are available in the market. Some notable alternatives include: - MT29F4G08ABADAWP-E:G TR - MT29F4G08ABADAWP-E:A TR - MT29F4G08ABADAWP-E:B TR

These alternative models can be considered based on specific requirements, availability, and cost considerations.

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