MT29F4G08ABADAWP-E:D

Product Overview

Category

MT29F4G08ABADAWP-E:D belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABADAWP-E:D has a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory provides reliable and durable storage for long-term use.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It consumes minimal power during operation, contributing to energy efficiency.

Package and Quantity

MT29F4G08ABADAWP-E:D is available in a surface-mount package. The exact packaging/quantity details can vary depending on the manufacturer and specific requirements.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F4G08ABADAWP-E:D can be found in the product datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Error Correction Code (ECC): The NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: It employs wear-leveling techniques to distribute data evenly across memory blocks, extending the lifespan of the device.
• Bad Block Management: The product includes mechanisms for identifying and managing defective memory blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Compact package size makes it suitable for small electronic devices.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures long-term data retention.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F4G08ABADAWP-E:D utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading or writing data, the controller sends appropriate signals to access specific memory cells and perform the necessary operations.

Detailed Application Field Plans

MT29F4G08ABADAWP-E:D finds applications in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, offering faster boot times and improved system performance.
4. Industrial control systems: Enables data logging and storage in automation and control applications.
5. Automotive electronics: Used for storing firmware, maps, and other critical data in automotive systems.

Detailed Alternative Models

1. MT29F4G08ABADAWP-E: Similar to the mentioned model but without the "D" suffix, indicating a different package or other minor variations.
2. MT29F4G16ABADAWP-E: A higher-capacity variant with 8 GB storage capacity.
3. MT29F2G08ABAEAWP-E: A lower-capacity variant with 2 GB storage capacity.

These alternative models offer different storage capacities or slight variations in specifications, providing options to suit specific requirements.

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