MT29F4G08ABADAWP-AATX:D TR

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Surface Mount Technology (SMT) package
• Essence: Provides reliable and high-performance data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 4 Gigabits (512 Megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 52 Megabytes per second (Read), up to 16 Megabytes per second (Write)

Pin Configuration

The MT29F4G08ABADAWP-AATX:D TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• High-speed data transfer for efficient read/write operations
• Error correction and detection mechanisms for data integrity
• Wear-leveling algorithms to distribute data evenly across memory cells
• Block management techniques for efficient memory utilization
• Power-saving features to optimize energy consumption

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rates - Non-volatile memory retains data even without power - Reliable and durable - Suitable for a wide range of applications

Disadvantages: - Higher cost compared to other memory technologies - Limited endurance (number of write cycles) - Sensitive to environmental conditions such as temperature and humidity

Working Principles

The MT29F4G08ABADAWP-AATX:D TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltage to specific pins and manipulating the charge levels within the memory cells.

Detailed Application Field Plans

The MT29F4G08ABADAWP-AATX:D TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems
7. Medical devices

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT29F4G08ABAEAWP-AATX:D TR
2. MT29F4G08ABADAWP-ITX:D TR
3. MT29F4G08ABAEAWP-ITX:D TR
4. MT29F4G08ABADAWP-AATX:Q TR
5. MT29F4G08ABAEAWP-AATX:Q TR

These models have comparable specifications and can be considered as alternatives to the MT29F4G08ABADAWP-AATX:D TR.

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