MT29F4G08ABADAH4-AT:D TR

Product Overview

Category

MT29F4G08ABADAH4-AT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABADAH4-AT:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F4G08ABADAH4-AT:D TR comes in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08ABADAH4-AT:D TR is typically packaged in surface mount technology (SMT) packages. The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G08ABADAH4-AT:D TR
• Memory Type: NAND Flash
• Memory Capacity: 4 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. DQ0-DQ7 (Data Input/Output)
10. WP (Write Protect)
11. RP (Reset Pin)
12. NC (No Connection)

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Page Program Operation: MT29F4G08ABADAH4-AT:D TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read and Write Protection: The product offers various protection mechanisms to prevent unauthorized access or modification of data.
• Wear-Leveling Algorithm: This feature ensures even distribution of write and erase cycles across memory cells, enhancing the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for efficient read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption, suitable for battery-powered devices.
• Compact form factor for easy integration into electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write and erase cycles before it may become unreliable.
• Susceptible to data loss in case of power failure during write operations.
• Higher cost compared to other types of non-volatile memory.

Working Principles

MT29F4G08ABADAH4-AT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The memory cells are accessed through various control signals and data lines, enabling read, write, and erase operations.

During a read operation, the requested data is retrieved from the memory cells and transferred to the output pins. Write operations involve programming the memory cells with new data, while erase operations clear entire blocks of data for rewriting. The NAND flash memory controller manages these operations and ensures data integrity and reliability.

Detailed Application Field Plans

MT29F4G08ABADAH4-AT:D TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

The product's high storage capacity, fast data transfer rate, and compact form factor make it suitable for these applications, where reliable and efficient data storage is essential.

Detailed and Complete Alternative Models

• MT29F4G08ABADAH4-AT:E TR
• MT29F4G08ABADAH4-AT: