MT29F4G08ABADAH4-AATX:D TR

Product Overview

Category

MT29F4G08ABADAH4-AATX:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABADAH4-AATX:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G08ABADAH4-AATX:D TR comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08ABADAH4-AATX:D TR is typically packaged in surface-mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 Gb
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29F4G08ABADAH4-AATX:D TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. DQ0
10. DQ1
11. DQ2
12. DQ3
13. DQ4
14. DQ5
15. DQ6
16. DQ7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F4G08ABADAH4-AATX:D TR supports page read, program, and erase operations, allowing for efficient data management.
• Block Management: It incorporates advanced block management techniques to optimize the lifespan and performance of the NAND flash memory.
• Error Correction: This memory device utilizes error correction codes (ECC) to ensure data integrity and reliability.
• Wear Leveling: It employs wear leveling algorithms to distribute write operations evenly across memory blocks, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it starts to degrade.
• Susceptible to electrical interference: NAND flash memory can be sensitive to electrical noise, which may affect its performance.

Working Principles

The MT29F4G08ABADAH4-AATX:D TR is based on NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary values of the stored data (0 or 1).

During read operations, the charges are measured to determine the stored data. For write and erase operations, high voltages are applied to modify the charge levels within the memory cells.

Detailed Application Field Plans

The MT29F4G08ABADAH4-AATX:D TR can be used in various applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT29F4G08ABADAH4-AATX:D TR include: - Samsung K9F4G08U0D - Toshiba TH58NV