Micron Technology Inc.
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MT29F4G01ADAGDWB-IT:G

MT29F4G01ADAGDWB-IT:G

Product Overview

Category

The MT29F4G01ADAGDWB-IT:G belongs to the category of NAND flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F4G01ADAGDWB-IT:G offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With its advanced architecture, this NAND flash memory device enables high-speed data transfer, ensuring efficient performance.
  • Reliable and durable: The product is designed to withstand frequent read and write operations, making it highly reliable and long-lasting.
  • Low power consumption: The MT29F4G01ADAGDWB-IT:G is energy-efficient, consuming minimal power during operation.

Package

This product comes in a compact and standardized package, which ensures compatibility with various electronic devices. The package dimensions are 14mm x 18mm x 1.2mm.

Essence

The essence of the MT29F4G01ADAGDWB-IT:G lies in its ability to provide high-capacity and reliable data storage for electronic devices, enhancing their overall performance.

Packaging/Quantity

The MT29F4G01ADAGDWB-IT:G is typically packaged individually and is available in bulk quantities for manufacturers and distributors. The exact packaging quantity may vary depending on the supplier.

Specifications

  • Storage Capacity: 4 GB
  • Interface: NAND Flash
  • Supply Voltage: 3.3V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400 megabits per second (Mbps)
  • Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F4G01ADAGDWB-IT:G has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Read/Program/Erase Operations: The MT29F4G01ADAGDWB-IT:G supports efficient read, program, and erase operations at the page level, allowing for flexible data management.
  • Error Correction Code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability during read and write operations.
  • Wear-Leveling: The NAND flash memory device utilizes wear-leveling techniques to distribute write operations evenly across memory blocks, extending the overall lifespan of the product.

Advantages and Disadvantages

Advantages

  • High storage capacity enables ample data storage.
  • Fast data transfer rate ensures efficient performance.
  • Reliable and durable design for frequent read and write operations.
  • Low power consumption contributes to energy efficiency.

Disadvantages

  • Limited compatibility with certain older electronic devices that do not support NAND flash memory.

Working Principles

The MT29F4G01ADAGDWB-IT:G operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where data is stored in individual transistors. These transistors can be electrically programmed and erased, allowing for non-volatile data storage.

Detailed Application Field Plans

The MT29F4G01ADAGDWB-IT:G finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

  1. MT29F4G08ABADAWP-IT:G
  2. MT29F4G08ABAEAWP-IT:G
  3. MT29F4G08ABACAWP-IT:G 4

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F4G01ADAGDWB-IT:G v technických řešeních

  1. Question: What is the capacity of the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G has a capacity of 4 gigabytes (GB).

  2. Question: What is the interface type supported by the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G supports the NAND Flash interface.

  3. Question: What is the operating voltage range for the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G operates within a voltage range of 2.7V to 3.6V.

  4. Question: What is the maximum data transfer rate of the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G has a maximum data transfer rate of up to 50 megabytes per second (MB/s).

  5. Question: Can the MT29F4G01ADAGDWB-IT:G be used in industrial applications?
    Answer: Yes, the MT29F4G01ADAGDWB-IT:G is designed for industrial applications and can withstand harsh environments.

  6. Question: Does the MT29F4G01ADAGDWB-IT:G support wear-leveling algorithms?
    Answer: Yes, the MT29F4G01ADAGDWB-IT:G supports wear-leveling algorithms to ensure even distribution of write and erase cycles.

  7. Question: What is the temperature range for the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G operates within a temperature range of -40°C to 85°C.

  8. Question: Can the MT29F4G01ADAGDWB-IT:G be used in automotive applications?
    Answer: Yes, the MT29F4G01ADAGDWB-IT:G is suitable for automotive applications and meets the required specifications.

  9. Question: Does the MT29F4G01ADAGDWB-IT:G support hardware encryption?
    Answer: No, the MT29F4G01ADAGDWB-IT:G does not have built-in hardware encryption capabilities.

  10. Question: What is the expected lifespan of the MT29F4G01ADAGDWB-IT:G?
    Answer: The MT29F4G01ADAGDWB-IT:G has a typical lifespan of several thousand program/erase cycles, depending on usage and conditions.