MT29F4G01ABBFD12-ITES:F

Product Overview

Category

MT29F4G01ABBFD12-ITES:F belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G01ABBFD12-ITES:F offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Low power consumption: The device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G01ABBFD12-ITES:F comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G01ABBFD12-ITES:F is typically packaged in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount

Pin Configuration

The detailed pin configuration of the MT29F4G01ABBFD12-ITES:F is as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines
9. WP: Write protect
10. GND: Ground

Functional Features

• Page Program: The MT29F4G01ABBFD12-ITES:F supports page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read and Write Operations: The device allows for fast and efficient read and write operations, ensuring quick access to stored data.
• Error Correction Code (ECC): The NAND flash memory incorporates ECC algorithms to detect and correct errors, enhancing data reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles, which may affect its lifespan.
• Susceptible to electrical interference: The device may be sensitive to electrical noise, requiring proper shielding and design considerations.

Working Principles

The MT29F4G01ABBFD12-ITES:F utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level within the cell. When reading data, the charge levels are measured to determine the stored information. During writing, the charge levels are adjusted to represent the desired data.

Detailed Application Field Plans

The MT29F4G01ABBFD12-ITES:F finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Below are some alternative models that offer similar functionality: - MT29F4G08ABADAWP - MT29F4G16ABBFDWP - MT29F4G08ABAEAWP - MT29F4G16ABBFDWP

These alternative models provide different storage capacities, package types, or additional features to suit specific requirements.

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