MT29F3T08EUHBBM4-3RES:B TR

Product Overview

Category

MT29F3T08EUHBBM4-3RES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F3T08EUHBBM4-3RES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT29F3T08EUHBBM4-3RES:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 8GB
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400Mbps
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE#: Chip enable
4. RE#: Read enable
5. WE#: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B#: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• High-speed read and write operations
• Error correction code (ECC) for data integrity
• Wear-leveling algorithm to distribute data evenly across memory cells
• Bad block management for efficient use of available storage space
• Power-saving features such as deep power-down mode

Advantages

• Fast data transfer rate enhances overall system performance
• Large storage capacity allows for storing a vast amount of data
• Compact size enables integration into space-constrained devices
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory chip
• Susceptible to data corruption in case of power failure during write operations
• Relatively higher cost compared to other types of memory

Working Principles

MT29F3T08EUHBBM4-3RES:B TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends commands and addresses to the memory chip, which then performs the necessary operations.

Detailed Application Field Plans

MT29F3T08EUHBBM4-3RES:B TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F8G08ABABA
2. MT29F16G08CBACA
3. MT29F32G08CBADA
4. MT29F64G08CBABA

These alternative models offer different capacities and specifications to cater to diverse application requirements.

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