MT29F3T08EUCBBM4-37ES:B TR

Product Overview

Category

MT29F3T08EUCBBM4-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Durable and reliable

Package

MT29F3T08EUCBBM4-37ES:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

MT29F3T08EUCBBM4-37ES:B TR is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

• Storage Capacity: 8GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400Mbps
• Package Type: TSOP

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address lines
7. DQ0-DQ15 - Data input/output lines
8. R/B - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments, enhancing write efficiency.
• Block Erase Operation: Enables the erasure of large blocks of data, improving overall storage management.
• Read and Write Speeds: Offers fast read and write speeds, facilitating quick data access and transfer.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling Algorithm: Distributes data evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Low power consumption
• Compact size for easy integration
• Durable and reliable

Disadvantages

• Limited endurance compared to other types of non-volatile memory
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F3T08EUCBBM4-37ES:B TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The programming and erasing operations are performed at the block level, allowing for efficient data management.

Detailed Application Field Plans

MT29F3T08EUCBBM4-37ES:B TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F3T16ABDWP-IT:D - 16GB NAND Flash Memory with similar specifications and features.
2. MT29F3G08ABADAWP-IT:E - 32GB NAND Flash Memory with higher storage capacity.
3. MT29F3T08EUCBBM4-37ES:C TR - A variant with extended temperature range (-40°C to +105°C).

These alternative models offer different storage capacities and temperature ranges, providing flexibility for various application requirements.

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