MT29F3T08EQHBBG2-3R:B TR

Product Overview

Category

The MT29F3T08EQHBBG2-3R:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

The MT29F3T08EQHBBG2-3R:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F3T08EQHBBG2-3R:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 8 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 MB/s (Read), Up to 100 MB/s (Write)

Detailed Pin Configuration

The MT29F3T08EQHBBG2-3R:B TR has a pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address lines
7. DQ0-DQ15 - Data input/output lines
8. R/B - Ready/Busy status
9. WP - Write protect

Functional Features

• Page-level data programming and erasing
• Block-level data protection
• Error correction code (ECC) for data integrity
• Wear leveling algorithm to distribute data evenly across memory cells
• Bad block management for efficient use of available storage space

Advantages and Disadvantages

Advantages

• High-speed data transfer allows for quick access to stored information.
• Large storage capacity enables the storage of a vast amount of data.
• Compact size facilitates integration into various electronic devices.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Relatively higher cost per gigabyte compared to alternative storage technologies.

Working Principles

The MT29F3T08EQHBBG2-3R:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the manipulation of the charge on the floating gates.

Detailed Application Field Plans

The MT29F3T08EQHBBG2-3R:B TR finds applications in various fields, including:

1. Mobile Devices: Used as internal storage in smartphones, tablets, and portable media players.
2. Digital Cameras: Provides high-capacity storage for capturing and storing photos and videos.
3. Solid-State Drives (SSDs): Used as primary storage in computers and laptops, offering faster data access compared to traditional hard drives.
4. Industrial Automation: Enables data storage in industrial control systems and embedded devices.
5. Automotive Electronics: Used for data storage in infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).

Detailed and Complete Alternative Models

1. Samsung K9F4G08U0D
2. Toshiba TH58NVG6D2FLA89
3. Micron MT29F8G08ABACAWP

These alternative models offer similar specifications and functionality to the MT29F3T08EQHBBG2-3R:B TR and can be considered as alternatives based on specific requirements and availability.

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