Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Tape and reel packaging, quantity varies
The MT29F3T08EQCBBG2-37ES:B TR has a 48-ball VFBGA package with the following pin configuration:
Advantages: - Large storage capacity - Fast access speed - Suitable for various applications - RoHS compliant
Disadvantages: - Limited endurance cycles - Relatively high cost compared to other memory technologies
The MT29F3T08EQCBBG2-37ES:B TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in blocks. Each cell can store multiple bits of information, allowing for high storage density. The memory can be read from or written to using specific commands and control signals.
The MT29F3T08EQCBBG2-37ES:B TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include:
These alternative models offer similar functionality and capacity but may differ in package type and other specifications.
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1. What is the MT29F3T08EQCBBG2-37ES:B TR?
The MT29F3T08EQCBBG2-37ES:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.
2. What is the capacity of the MT29F3T08EQCBBG2-37ES:B TR?
The capacity of the MT29F3T08EQCBBG2-37ES:B TR is typically 8 gigabytes (GB).
3. What is the operating voltage range for the MT29F3T08EQCBBG2-37ES:B TR?
The operating voltage range for the MT29F3T08EQCBBG2-37ES:B TR is typically between 2.7 volts (V) and 3.6V.
4. What is the maximum data transfer rate supported by the MT29F3T08EQCBBG2-37ES:B TR?
The maximum data transfer rate supported by the MT29F3T08EQCBBG2-37ES:B TR is typically up to 52 megabytes per second (MB/s).
5. What is the temperature range in which the MT29F3T08EQCBBG2-37ES:B TR can operate?
The MT29F3T08EQCBBG2-37ES:B TR can operate within a temperature range of -40 degrees Celsius to +85 degrees Celsius.
6. Is the MT29F3T08EQCBBG2-37ES:B TR compatible with various interfaces?
Yes, the MT29F3T08EQCBBG2-37ES:B TR is compatible with common interfaces such as ONFI (Open NAND Flash Interface) and Toggle Mode.
7. Can the MT29F3T08EQCBBG2-37ES:B TR be used in automotive applications?
Yes, the MT29F3T08EQCBBG2-37ES:B TR is designed to meet the requirements of automotive applications and can withstand harsh operating conditions.
8. What is the typical lifespan or endurance of the MT29F3T08EQCBBG2-37ES:B TR?
The MT29F3T08EQCBBG2-37ES:B TR has a typical lifespan or endurance of up to 3,000 program/erase cycles.
9. Does the MT29F3T08EQCBBG2-37ES:B TR support hardware data protection features?
Yes, the MT29F3T08EQCBBG2-37ES:B TR supports various hardware data protection features such as block locking, password protection, and secure erase.
10. Can the MT29F3T08EQCBBG2-37ES:B TR be used in industrial applications?
Yes, the MT29F3T08EQCBBG2-37ES:B TR is suitable for industrial applications due to its high reliability, extended temperature range, and robustness.