MT29F384G08EBHBBJ4-3RES:B TR

Product Overview

Category

MT29F384G08EBHBBJ4-3RES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F384G08EBHBBJ4-3RES:B TR offers a storage capacity of 384 gigabits (48 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver consistent and reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F384G08EBHBBJ4-3RES:B TR is energy-efficient, consuming minimal power during operation, which is crucial for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F384G08EBHBBJ4-3RES:B TR is typically packaged in a surface-mount technology (SMT) package. It is available in reel packaging, with each reel containing a specific quantity of chips. The exact quantity per reel may vary depending on the manufacturer's specifications.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F384G08EBHBBJ4-3RES:B TR
• Memory Type: NAND Flash
• Storage Capacity: 384 gigabits (48 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to 85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F384G08EBHBBJ4-3RES:B TR has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

1. VCC - Power supply voltage
2. WE# - Write Enable
3. A0-A18 - Address Inputs
4. CE# - Chip Enable
5. CLE - Command Latch Enable
6. ALE - Address Latch Enable
7. RE# - Read Enable
8. WP# - Write Protect
9. R/B# - Ready/Busy
10. DQ0-DQ15 - Data Input/Output

(Note: The remaining pin descriptions are omitted for brevity.)

Functional Features

• Page Program Operation: The MT29F384G08EBHBBJ4-3RES:B TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which facilitate the removal of large amounts of data at once.
• Read and Write Protection: The product offers read and write protection features to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): ECC functionality is integrated into the MT29F384G08EBHBBJ4-3RES:B TR, ensuring data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F384G08EBHBBJ4-3RES:B TR utilizes the principles of NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on the floating gate. Data is written and read by applying appropriate voltage levels to the control gates and accessing the stored charge levels.

Detailed Application Field Plans

The MT29F384G08EBHBBJ4-3RES:B TR finds applications in various electronic devices that require high-capacity data storage. Some specific application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0B - 8 gigabit