MT29F384G08EBHBBJ4-3R:B TR

Product Overview

Category

The MT29F384G08EBHBBJ4-3R:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F384G08EBHBBJ4-3R:B TR offers a storage capacity of 384 gigabits (48 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F384G08EBHBBJ4-3R:B TR comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F384G08EBHBBJ4-3R:B TR is typically packaged in surface-mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F384G08EBHBBJ4-3R:B TR
• Memory Type: NAND Flash
• Storage Capacity: 384 gigabits (48 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F384G08EBHBBJ4-3R:B TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F384G08EBHBBJ4-3R:B TR allows for efficient reading, programming, and erasing of data at the page level.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to ensure data integrity and reliability.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across the memory cells, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance ensures consistent operation over time.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F384G08EBHBBJ4-3R:B TR utilizes the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The stored data can be read, programmed, or erased at the page level using specific control signals.

Detailed Application Field Plans

The MT29F384G08EBHBBJ4-3R:B TR is widely used in various electronic devices that require high-capacity and reliable data storage. Some application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Enables storage of high-resolution photos and videos.
3. Solid-state drives (SSDs): Provides fast and reliable