MT29F384G08EBHBBJ4-3R:B

Product Overview

Category

MT29F384G08EBHBBJ4-3R:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F384G08EBHBBJ4-3R:B offers a storage capacity of 384 gigabits (48 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life.
• Durable design: MT29F384G08EBHBBJ4-3R:B is built to withstand harsh environmental conditions, making it suitable for use in rugged devices.

Package and Quantity

The MT29F384G08EBHBBJ4-3R:B NAND flash memory is available in a compact package, typically a surface-mount device (SMD). The exact package dimensions and pin configuration are provided in the specifications section below. It is commonly sold in quantities of one or more, depending on the requirements of the customer.

Specifications

• Storage Capacity: 384 gigabits (48 gigabytes)
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount Device (SMD)
• Pin Configuration: Detailed pin configuration is provided in the next section.

Detailed Pin Configuration

The MT29F384G08EBHBBJ4-3R:B NAND flash memory has a total of 48 pins. The pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE# - Write Enable
6. CE# - Chip Enable
7. RE# - Read Enable
8. R/B# - Ready/Busy status
9. WP# - Write Protect
10. CLE - Command Latch Enable
11. ALE - Address Latch Enable

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

• Page Program: Allows data to be written in page-sized increments, enhancing write performance.
• Block Erase: Enables erasing of large blocks of data, improving efficiency.
• Random Access: Provides fast random access to stored data, facilitating quick retrieval and processing.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with low power consumption.
• Durable design suitable for rugged environments.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

MT29F384G08EBHBBJ4-3R:B utilizes NAND flash memory technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored information. Writing involves applying a high voltage to the gate to change the charge level.

Detailed Application Field Plans

The MT29F384G08EBHBBJ4-3R:B NAND flash memory finds applications in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable storage in computer systems. - Industrial equipment that requires rugged and durable storage solutions.

Alternative Models

For those seeking alternative NAND flash memory options, the following models can be considered: - MT29F256G08CJAAA - MT29F512G08CKCAB - MT29F1T08EMDHCJ4

These models offer different storage capacities and features, allowing customers to choose the most suitable option for their specific requirements.

In conclusion, the MT29F384G08EBHBBJ4-3R:B NAND flash memory provides high-capacity, reliable,