MT29F384G08EBCBBJ4-37:B TR

Product Overview

Category

MT29F384G08EBCBBJ4-37:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F384G08EBCBBJ4-37:B TR offers a storage capacity of 384 gigabits (48 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F384G08EBCBBJ4-37:B TR is built to withstand harsh environmental conditions, ensuring data integrity even in challenging operating environments.

Package and Quantity

The MT29F384G08EBCBBJ4-37:B TR is available in a compact package, typically a surface-mount device (SMD). The exact package type may vary depending on the manufacturer. It is commonly sold in reels or trays containing multiple units.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F384G08EBCBBJ4-37:B TR
• Memory Type: NAND Flash
• Storage Capacity: 384 gigabits (48 gigabytes)
• Interface: Parallel or Serial
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)

Pin Configuration

The detailed pin configuration for the MT29F384G08EBCBBJ4-37:B TR can be found in the datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program Operation: The MT29F384G08EBCBBJ4-37:B TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which facilitate efficient management of stored data.
• Read and Write Operations: The product offers fast read and write operations, ensuring quick access to stored information.
• Error Correction Code (ECC): The MT29F384G08EBCBBJ4-37:B TR incorporates ECC algorithms to enhance data reliability and integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance with low power consumption.
• Durable design suitable for challenging operating environments.

Disadvantages

• May have a higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with certain legacy devices that do not support high-capacity storage.

Working Principles

The MT29F384G08EBCBBJ4-37:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where data is stored as electrical charges within floating-gate transistors. These charges are trapped or released to represent binary data (0s and 1s). The memory cells are organized into pages and blocks, allowing for efficient read, write, and erase operations.

Application Field Plans

The MT29F384G08EBCBBJ4-37:B TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

For those seeking alternative options, the following NAND flash memory models can be considered: - MT29F256G08CJAAA - MT29F512G08CKCAB - MT29F1T08EMHAFJ4-ITX

These models offer different storage capacities, interfaces, and package types, providing flexibility to suit specific requirements.

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