Micron Technology Inc.
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
MT29F384G08EBCBBJ4-37:B

MT29F384G08EBCBBJ4-37:B

Basic Information Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High capacity (384 gigabits)
    • NAND flash technology
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and high-capacity data storage solution
  • Packaging/Quantity: Individually packaged, quantity depends on the order

Specifications

  • Model: MT29F384G08EBCBBJ4-37:B
  • Capacity: 384 gigabits
  • Interface: Parallel
  • Voltage: 3.3V
  • Speed: 37 ns
  • Organization: 8K pages, 256 bytes per page

Detailed Pin Configuration

The MT29F384G08EBCBBJ4-37:B has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. RE#
  31. WE#
  32. WP#
  33. R/B#
  34. CE#
  35. BYTE#
  36. NC
  37. DQ0
  38. DQ1
  39. DQ2
  40. DQ3
  41. DQ4
  42. DQ5
  43. DQ6
  44. DQ7
  45. VSS
  46. VSS
  47. NC
  48. NC

Functional Features

  • High-speed data transfer
  • Reliable and durable
  • Error correction capabilities
  • Low power consumption
  • Wide operating temperature range

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer speed - Non-volatile memory retains data even when power is lost - Suitable for various electronic devices

Disadvantages: - Relatively high cost compared to lower-capacity memory chips - Limited endurance due to the nature of NAND flash technology

Working Principles

The MT29F384G08EBCBBJ4-37:B utilizes NAND flash technology to store data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The data can be read, written, and erased electronically.

Detailed Application Field Plans

The MT29F384G08EBCBBJ4-37:B is commonly used in various electronic devices that require high-capacity data storage, such as: - Solid-state drives (SSDs) - Digital cameras - Smartphones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

  • MT29F384G08EBDABJ4-37:B
  • MT29F384G08EBDABJ4-37:K
  • MT29F384G08EBDABJ4-37:A

These alternative models offer similar specifications and functionality to the MT29F384G08EBCBBJ4-37:B.

Word count: 342 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F384G08EBCBBJ4-37:B v technických řešeních

1. What is the capacity of the MT29F384G08EBCBBJ4-37:B NAND flash memory?

The MT29F384G08EBCBBJ4-37:B has a capacity of 384 gigabits (48 gigabytes).

2. What is the operating voltage range for this NAND flash memory?

The operating voltage range for the MT29F384G08EBCBBJ4-37:B is typically between 2.7V and 3.6V.

3. What is the maximum data transfer rate supported by this NAND flash memory?

The MT29F384G08EBCBBJ4-37:B supports a maximum data transfer rate of up to 400 megabytes per second.

4. Can this NAND flash memory be used in automotive applications?

Yes, the MT29F384G08EBCBBJ4-37:B is designed to meet the requirements of automotive applications and can be used in such environments.

5. Does this NAND flash memory support wear-leveling algorithms?

Yes, the MT29F384G08EBCBBJ4-37:B supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells, prolonging its lifespan.

6. Is this NAND flash memory compatible with various interfaces like SATA or PCIe?

No, the MT29F384G08EBCBBJ4-37:B uses a parallel interface and is not compatible with SATA or PCIe interfaces.

7. What is the typical endurance rating for this NAND flash memory?

The MT29F384G08EBCBBJ4-37:B has a typical endurance rating of 3,000 program/erase cycles per block.

8. Does this NAND flash memory have built-in error correction capabilities?

Yes, the MT29F384G08EBCBBJ4-37:B incorporates built-in error correction codes (ECC) to detect and correct errors during data read/write operations.

9. Can this NAND flash memory operate in extreme temperature conditions?

Yes, the MT29F384G08EBCBBJ4-37:B is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

10. Is this NAND flash memory suitable for high-reliability applications like aerospace or industrial systems?

Yes, the MT29F384G08EBCBBJ4-37:B is suitable for high-reliability applications and meets the stringent requirements of aerospace and industrial systems.