MT29F32G08CBADBWP-12IT:D TR

Product Overview

Category

The MT29F32G08CBADBWP-12IT:D TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F32G08CBADBWP-12IT:D TR offers a storage capacity of 32 gigabits (4 gigabytes).
• Fast data transfer rate: It supports a high-speed interface, enabling quick read and write operations.
• Reliable performance: This NAND flash memory chip is designed to provide reliable and durable data storage.
• Low power consumption: It operates efficiently with low power consumption, making it suitable for portable devices.
• Compact package: The MT29F32G08CBADBWP-12IT:D TR comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F32G08CBADBWP-12IT:D TR is packaged in a Ball Grid Array (BGA) package. Each package contains one NAND flash memory chip.

Specifications

• Part Number: MT29F32G08CBADBWP-12IT:D TR
• Memory Type: NAND Flash
• Storage Capacity: 32 gigabits (4 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (MB/s)
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The MT29F32G08CBADBWP-12IT:D TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F32G08CBADBWP-12IT:D TR supports page-level operations for efficient data management.
• Block Erase: It allows for erasing a block of data, enabling faster memory clearing.
• Error Correction Code (ECC): This NAND flash memory chip incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It employs wear-leveling techniques to distribute write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance ensures data integrity and durability.

Disadvantages

• Limited endurance due to the finite number of erase/program cycles.
• Relatively higher cost compared to other types of memory technologies.
• Requires specialized controllers for optimal operation.

Working Principles

The MT29F32G08CBADBWP-12IT:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, the chip applies voltages to specific pins, allowing electrons to flow in or out of the memory cells.

During programming, the chip applies high voltage to the control gates and charges the floating gates, altering their electrical state. Erasing is achieved by applying a higher voltage to remove the charge from the floating gates. The stored data can be accessed by sending commands and addresses through the interface pins.

Detailed Application Field Plans

The MT29F32G08CBADBWP-12IT:D TR finds applications in various electronic devices that require non-volatile