MT29F32G08CBADBWP-12:D TR

Product Overview

Category

MT29F32G08CBADBWP-12:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F32G08CBADBWP-12:D TR offers a storage capacity of 32 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand harsh environmental conditions and has a long lifespan.

Package

The MT29F32G08CBADBWP-12:D TR comes in a small form factor package, making it suitable for compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and reliably.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary but is usually in the range of hundreds or thousands.

Specifications

• Model: MT29F32G08CBADBWP-12:D TR
• Storage Capacity: 32 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The MT29F32G08CBADBWP-12:D TR has a specific pin configuration that enables proper connectivity and functionality within a device. The detailed pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ7 - Data Input/Output
8. R/B# - Ready/Busy
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable

Functional Features

• High-speed data transfer: The MT29F32G08CBADBWP-12:D TR offers fast read and write speeds, allowing for efficient data processing.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This feature evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: The product includes mechanisms to identify and manage defective blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Durable design
• Low power consumption

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Higher cost compared to other types of memory.

Working Principles

The MT29F32G08CBADBWP-12:D TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a specific voltage to modify the charge level.

Detailed Application Field Plans

The MT29F32G08CBADBWP-12:D TR finds application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F32G08CBADBWP-12:G TR
2. MT29F32G08CBADBWP-12:E TR
3. MT29F32G08CBADBWP-12:C TR
4. MT29F32G08CBADBWP-12:B TR

These alternative models offer similar specifications and functionality to the MT29F32G08CBADBWP-12:D TR, providing options for different application requirements.

In conclusion, the MT29F32G08CBADBWP-12:D TR is a NAND flash memory product with a high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices and offers advantages such as durability and low power consumption. However, it has limitations in terms of endurance and cost. Its working principle involves storing and retrieving data using NAND flash memory technology. Alternative models are available to cater to different application needs