MT29F32G08CBADAWP-M:D TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, reliable data retention
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Density: 32 gigabits (4 gigabytes)
• Organization: 8 bits per cell
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Up to 50 MB/s
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F32G08CBADAWP-M:D TR follows a standard pin configuration for parallel NAND flash memory. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. RE#: Read enable control
7. CLE: Command latch enable
8. ALE: Address latch enable
9. CE#: Chip enable control
10. R/B#: Ready/busy status output
11. WP#: Write protect control
12. RP#: Reset pin

Functional Features

• High-speed data transfer with fast read/write speeds
• Reliable data retention for long periods
• Error correction codes (ECC) for data integrity
• Block management algorithms for efficient use of memory space
• Wear-leveling techniques to extend flash memory lifespan
• Bad block management for improved reliability

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer speeds - Low power consumption - Compact package size - Wide operating temperature range

Disadvantages: - Limited endurance compared to other memory types - Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F32G08CBADAWP-M:D TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the stored information. The memory cells are organized into blocks, and each block can be individually erased or programmed.

Detailed Application Field Plans

The MT29F32G08CBADAWP-M:D TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Industrial control systems
7. Automotive electronics
8. Medical devices

Alternative Models

1. MT29F64G08CBADAWP-M:D TR - 64 gigabit density
2. MT29F16G08CBADAWP-M:D TR - 16 gigabit density
3. MT29F128G08CBADAWP-M:D TR - 128 gigabit density

These alternative models offer different storage capacities to suit specific requirements.

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