MT29F2T08EMHAFJ4-3TES:A TR

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: TSOP (Thin Small Outline Package)
• Essence: Flash memory
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F2T08EMHAFJ4-3TES:A TR
• Memory Type: NAND Flash
• Density: 2Gb (Gigabits)
• Organization: 256M x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Toggle Mode 2.0
• Page Size: 8KB
• Block Size: 512KB
• Erase/Program Speed: 25μs/200μs (typical)

Detailed Pin Configuration

The MT29F2T08EMHAFJ4-3TES:A TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE#: Chip enable input
4. RE#: Read enable input
5. WE#: Write enable input
6. CLE: Command latch enable input
7. ALE: Address latch enable input
8. WP#/ACC: Write protect input / Acceleration control input
9. R/B#: Ready/Busy output
10. DQ0-DQ7: Data input/output lines
11. NC: No connection
12. NC: No connection
13. NC: No connection
14. NC: No connection
15. NC: No connection
16. NC: No connection

Functional Features

• Toggle Mode 2.0 interface for high-speed data transfer
• Advanced NAND flash memory technology for reliable and efficient storage
• Built-in error correction code (ECC) for data integrity
• Wear-leveling algorithm to evenly distribute write/erase cycles
• Power-saving features for extended battery life
• High endurance and reliability for industrial applications

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast read/write speeds enable quick data access - Non-volatile nature ensures data retention even without power - Reliable and durable for long-term use - Suitable for a wide range of applications

Disadvantages: - Limited number of write/erase cycles compared to other memory technologies - Higher cost per unit compared to traditional hard drives

Working Principles

The MT29F2T08EMHAFJ4-3TES:A TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information, allowing for high-density storage.

To write data, the memory controller sends commands, addresses, and data to the device. The data is then programmed into the appropriate memory cells. Reading data involves sending commands and addresses to retrieve the stored information from the memory cells.

The device utilizes a toggle mode interface, which enables high-speed data transfer between the memory and the controller. This interface optimizes performance and reduces latency, making it suitable for applications that require fast data access.

Detailed Application Field Plans

The MT29F2T08EMHAFJ4-3TES:A TR is widely used in various electronic devices and systems, including:

1. Solid-State Drives (SSDs)
2. Embedded Systems
3. Industrial Control Systems
4. Automotive Electronics
5. Consumer Electronics (e.g., smartphones, tablets)
6. Networking Equipment

Its high capacity, fast read/write speeds, and reliability make it suitable for applications that require large data storage, quick data access, and robust performance.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT: 2Gb NAND Flash Memory, TSOP package
2. MT29F2G08ABBEAH4-IT:E: 2Gb NAND Flash Memory, BGA package
3. MT29F2G08ABDAGH4-IT:E: 2Gb NAND Flash Memory, WSON package
4. MT29F2T08EMHAFJ4-3R:A TR: 2Gb NAND Flash Memory, TSOP package, RoHS compliant

These alternative models offer similar specifications and functionality to the MT29F2T08EMHAFJ4-3TES:A TR, providing flexibility in design and compatibility with different system requirements.

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