MT29F2T08CWCCBJ7-12:C TR

Product Overview

Category

The MT29F2T08CWCCBJ7-12:C TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

The MT29F2T08CWCCBJ7-12:C TR is packaged in a small form factor, typically in a surface-mount package (SMT). The specific package type may vary depending on the manufacturer.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The MT29F2T08CWCCBJ7-12:C TR is usually sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Model: MT29F2T08CWCCBJ7-12:C TR
• Memory Type: NAND Flash
• Capacity: 2 Terabits (256 Gigabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Speed: Up to 100 Megabytes/s (Read), Up to 50 Megabytes/s (Write)

Detailed Pin Configuration

The pin configuration of the MT29F2T08CWCCBJ7-12:C TR is as follows:

1. Vcc (Power Supply)
2. GND (Ground)
3. A0-A18 (Address Inputs)
4. DQ0-DQ15 (Data Inputs/Outputs)
5. WE# (Write Enable)
6. CE# (Chip Enable)
7. RE# (Read Enable)
8. CLE (Command Latch Enable)
9. ALE (Address Latch Enable)
10. R/B# (Ready/Busy)

Functional Features

• Block Erase: The MT29F2T08CWCCBJ7-12:C TR supports block erase operations, allowing for efficient management of data storage.
• Page Program: It enables the programming of individual memory pages, facilitating flexible data storage and updates.
• Error Correction Code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The NAND flash memory employs wear leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High-speed data transfer rate
• Large storage capacity
• Compact size
• Low power consumption
• Reliable data storage
• Suitable for various electronic devices

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F2T08CWCCBJ7-12:C TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading or writing data, voltages are applied to specific pins to access and modify the stored information.

Detailed Application Field Plans

The MT29F2T08CWCCBJ7-12:C TR is widely used in various applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT29F2T08CWCCBJ7-12:C TR (Current Model)
• MT29F2G08ABAEAWP-IT:E TR
• MT29F2G08ABAEAWP-IT:D TR
• MT29F2G08ABAEAWP-IT:K TR
• MT29F2G08ABAEAWP-IT:L TR
• MT29F2G08ABAEAWP-IT:M TR

These alternative models offer similar specifications and functionality, providing options for different design requirements and availability from various manufacturers.

Note: The alternative models listed above are subject to change as new products are introduced to the market.

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