MT29F2T08CUHBBM4-3RES:B TR

Product Overview

Category

MT29F2T08CUHBBM4-3RES:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F2T08CUHBBM4-3RES:B TR comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F2T08CUHBBM4-3RES:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 2 Terabits (256 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The pin configuration of MT29F2T08CUHBBM4-3RES:B TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip Enable#
4. RE# - Read Enable#
5. WE# - Write Enable#
6. CLE - Command Latch Enable
7. ALE - Address Latch Enable
8. WP# - Write Protect#
9. R/B# - Ready/Busy#
10. DQ0-DQ15 - Data Input/Output

Functional Features

• High-speed data transfer: MT29F2T08CUHBBM4-3RES:B TR offers fast read and write speeds, allowing for efficient data processing.
• Error Correction Code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The NAND flash memory employs wear leveling techniques to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad Block Management: It includes a mechanism to identify and manage bad blocks, ensuring optimal performance and preventing data loss.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Compact size
• High-speed data transfer
• Low power consumption

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

MT29F2T08CUHBBM4-3RES:B TR utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors. When a voltage is applied, the trapped electrons are either removed or retained, representing binary values (0s and 1s). These values can be read or written by controlling the voltage levels applied to the memory cells.

Detailed Application Field Plans

MT29F2T08CUHBBM4-3RES:B TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F2T08CUHBBM4-3RES:B TR include: - Samsung K9F2G08U0M - Toshiba TH58NVG6D2FLA89 - Micron MT29F2G08ABAEA

These models offer similar specifications and functionality, providing alternatives for different design requirements.

Word count: 511 words