MT29F2T08CUHBBM4-3R:B TR

Product Overview

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

High storage capacity: The MT29F2T08CUHBBM4-3R:B TR offers a large storage capacity, allowing users to store a significant amount of data.
Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick data transfer between the device and the memory.
Reliable performance: The product is designed to provide reliable and consistent performance, ensuring the integrity of stored data.
Low power consumption: The MT29F2T08CUHBBM4-3R:B TR is energy-efficient, consuming minimal power during operation.
Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F2T08CUHBBM4-3R:B TR is typically packaged in a surface-mount package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

Memory Type: NAND Flash
Capacity: 2 Terabytes (TB)
Interface: Universal Flash Storage (UFS)
Voltage Range: 2.7V - 3.6V
Operating Temperature: -40°C to +85°C
Package Type: Ball Grid Array (BGA)
Pin Count: 153-ball

Detailed Pin Configuration

The pin configuration of MT29F2T08CUHBBM4-3R:B TR is as follows:

VCCQ
VCC
GND
CE#
RE#
WE#
CLE
ALE
WP#
R/B#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F2T08CUHBBM4-3R:B TR v technických řešeních

1. What is the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR has a capacity of 2 gigabytes (GB).

3. What is the interface used by the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR uses a standard NAND flash interface.

4. What are some common applications for the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR is commonly used in various technical solutions such as embedded systems, solid-state drives (SSDs), industrial automation, and automotive electronics.

5. What is the operating voltage range of the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR operates within a voltage range of 2.7V to 3.6V.

6. What is the maximum data transfer rate of the MT29F2T08CUHBBM4-3R:B TR?

The MT29F2T08CUHBBM4-3R:B TR supports a maximum data transfer rate of up to 52 megabytes per second (MB/s).

7. Does the MT29F2T08CUHBBM4-3R:B TR support wear-leveling and error correction?

Yes, the MT29F2T08CUHBBM4-3R:B TR supports wear-leveling algorithms and built-in error correction codes (ECC) to enhance data reliability.

8. Can the MT29F2T08CUHBBM4-3R:B TR withstand extreme temperatures?

Yes, the MT29F2T08CUHBBM4-3R:B TR is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C.

9. Is the MT29F2T08CUHBBM4-3R:B TR compatible with various operating systems?

Yes, the MT29F2T08CUHBBM4-3R:B TR is compatible with popular operating systems such as Linux, Windows, and embedded real-time operating systems.

10. Can the MT29F2T08CUHBBM4-3R:B TR be easily integrated into existing designs?

Yes, the MT29F2T08CUHBBM4-3R:B TR is available in industry-standard packages and pin configurations, making it easy to integrate into existing designs and systems.