MT29F2T08CUHBBM4-3R:B

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed, non-volatile
Package: BGA (Ball Grid Array)
Essence: NAND Flash memory
Packaging/Quantity: Single unit

Specifications

• Model: MT29F2T08CUHBBM4-3R:B
• Capacity: 2 Terabytes (TB)
• Interface: Universal Flash Storage (UFS)
• Voltage: 3.3V
• Access Speed: Up to 400 Megabytes per second (MB/s)
• Operating Temperature: -40°C to +85°C
• Endurance: 1 million Program/Erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F2T08CUHBBM4-3R:B has a total of 153 pins arranged in a specific configuration. The pinout diagram is as follows:

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Power-saving features
• Secure data protection mechanisms

Advantages

• Large storage capacity
• Fast access speed
• Non-volatile memory (retains data even without power)
• Suitable for various applications
• Robust and reliable performance
• Low power consumption

Disadvantages

• Relatively high cost compared to other memory options
• Limited write endurance compared to some alternatives
• Requires specialized hardware and software support

Working Principles

The MT29F2T08CUHBBM4-3R:B utilizes NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can hold multiple bits of information, allowing for high storage density. The memory cells are accessed through a controller that manages read and write operations.

Detailed Application Field Plans

The MT29F2T08CUHBBM4-3R:B is suitable for a wide range of applications, including:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics (e.g., smartphones, tablets)

Detailed Alternative Models

1. Model: MT29F2G08ABAEAWP-IT:E

   • Capacity: 2 Gigabytes (GB)
   • Interface: Parallel NAND Flash
   • Voltage: 3.3V
   • Access Speed: Up to 25 Megabytes per second (MB/s)

2. Model: MT29F2G16ABBEAH4-IT:E

   • Capacity: 2 Gigabytes (GB)
   • Interface: Toggle NAND Flash
   • Voltage: 3.3V
   • Access Speed: Up to 400 Megabytes per second (MB/s)

3. Model: MT29F2T08CUCBBM4-3R:A

   • Capacity: 2 Terabytes (TB)
   • Interface: Serial NAND Flash
   • Voltage: 3.3V
   • Access Speed: Up to 200 Megabytes per second (MB/s)

(Note: These alternative models are provided for reference and may have different specifications and characteristics.)

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This entry provides an overview of the MT29F2T08CUHBBM4-3R:B memory device, including its category, use, characteristics, package, essence, packaging/quantity, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.