MT29F2T08CUCBBK9-37:B TR

Product Overview

Category

MT29F2T08CUCBBK9-37:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F2T08CUCBBK9-37:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT29F2T08CUCBBK9-37:B TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 2 Terabits (256 Gigabytes)
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Up to 400 MB/s
• Endurance: Up to 10,000 Program/Erase cycles

Detailed Pin Configuration

1. VCC - Power Supply
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Inputs/Outputs
8. R/B - Ready/Busy Status
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable

Functional Features

• Page Program Operation
• Block Erase Operation
• Random Read Operation
• Cache Read Operation
• Multiplane Operation
• Error Correction Code (ECC)
• Wear Leveling Algorithm

Advantages and Disadvantages

Advantages

• High-speed data transfer allows for quick access to stored information.
• Large storage capacity enables the storage of a vast amount of data.
• Compact size facilitates integration into various electronic devices.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited endurance due to the finite number of program/erase cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F2T08CUCBBK9-37:B TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltage levels to specific pins and using various operations such as program, erase, and read.

Detailed Application Field Plans

MT29F2T08CUCBBK9-37:B TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT: 2 Gigabit (256 Megabyte) NAND Flash Memory
2. MT29F4G08ABADAWP-IT: 4 Gigabit (512 Megabyte) NAND Flash Memory
3. MT29F8G08ABACAWP-IT: 8 Gigabit (1 Gigabyte) NAND Flash Memory
4. MT29F16G08ABAAAWP-IT: 16 Gigabit (2 Gigabyte) NAND Flash Memory

These alternative models offer varying capacities to suit different storage requirements.

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