MT29F2T08CTCCBJ7-6R:C

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics: Non-volatile, high capacity, fast access speed
• Package: Chip form
• Essence: Flash memory technology
• Packaging/Quantity: Individual chip

Specifications

• Model: MT29F2T08CTCCBJ7-6R:C
• Capacity: 2 Terabits (256 Gigabytes)
• Organization: 8 planes, 1024 blocks per plane, 128 pages per block
• Interface: Toggle NAND
• Voltage: 3.3V
• Speed: Up to 400 Mbps

Detailed Pin Configuration

1. VCC: Power supply
2. GND: Ground
3. CE#: Chip enable
4. RE#: Read enable
5. WE#: Write enable
6. A0-A23: Address inputs
7. DQ0-DQ15: Data inputs/outputs
8. R/B#: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP#: Write protect
12. RP#: Reset/power down
13. NC: No connection

Functional Features

• High-speed data transfer
• Reliable data retention
• Error correction capability
• Wear-leveling algorithm for extended lifespan
• Block management for efficient data organization
• Bad block management for improved reliability

Advantages

• Large storage capacity
• Fast access speed
• Low power consumption
• Compact size
• High endurance

Disadvantages

• Limited write cycles
• Higher cost compared to traditional storage devices
• Susceptible to physical damage if mishandled

Working Principles

MT29F2T08CTCCBJ7-6R:C utilizes flash memory technology, which stores data in a non-volatile manner. It consists of multiple planes, blocks, and pages, allowing for efficient organization and retrieval of data. The chip communicates with the host device through a toggle NAND interface, enabling high-speed data transfer.

Detailed Application Field Plans

• Solid-state drives (SSDs)
• Embedded systems
• Mobile devices (smartphones, tablets)
• Digital cameras
• Gaming consoles

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT: 2 Gigabit (256 Megabytes), TSOP package
2. MT29F4G08ABADAWP-IT:E: 4 Gigabit (512 Megabytes), BGA package
3. MT29F8G08ABACAWP-IT:C: 8 Gigabit (1 Gigabyte), WSON package
4. MT29F16G08CBADAWP-IT:B: 16 Gigabit (2 Gigabytes), LGA package
5. MT29F32G08CBACAWP-IT:A: 32 Gigabit (4 Gigabytes), QFN package

Note: The alternative models listed above are just a few examples. There are several other models available in different capacities and packages.

This entry provides an overview of the MT29F2T08CTCCBJ7-6R:C memory device, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.