MT29F2T08CTCCBJ7-6C:C TR

Product Overview

Category

The MT29F2T08CTCCBJ7-6C:C TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

The MT29F2T08CTCCBJ7-6C:C TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F2T08CTCCBJ7-6C:C TR is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 2 Terabits (256 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Megabytes/s (Read), Up to 200 Megabytes/s (Write)

Detailed Pin Configuration

1. VCC (Power Supply)
2. GND (Ground)
3. CE# (Chip Enable)
4. RE# (Read Enable)
5. WE# (Write Enable)
6. A0-A18 (Address Inputs)
7. DQ0-DQ15 (Data Inputs/Outputs)
8. R/B# (Ready/Busy)
9. CLE (Command Latch Enable)
10. ALE (Address Latch Enable)
11. WP# (Write Protect)
12. RST# (Reset)

Functional Features

• High-speed read and write operations
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Bad block management
• Block erase and program operations
• Data protection through hardware and software features

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Compact size
• Low power consumption
• Reliable data storage
• Suitable for various electronic devices

Disadvantages

• Limited endurance (finite number of program/erase cycles)
• Higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The MT29F2T08CTCCBJ7-6C:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate.

During read operations, the controller sends an address to access a specific memory cell. The charge on the floating gate is measured, determining the stored data. Write operations involve applying a high voltage to the control gate, allowing electrons to tunnel through the insulating layer and modify the charge on the floating gate.

Detailed Application Field Plans

The MT29F2T08CTCCBJ7-6C:C TR finds applications in various fields, including:

1. Mobile Devices: Used as primary storage in smartphones and tablets.
2. Digital Cameras: Provides high-capacity storage for photos and videos.
3. Solid-State Drives (SSDs): Enables fast and reliable data storage in computer systems.
4. Automotive Electronics: Used for data storage in infotainment systems and navigation devices.
5. Industrial Control Systems: Provides non-volatile memory for storing critical data in automation and control applications.

Detailed and Complete Alternative Models

1. Samsung K9F2G08U0C
2. Toshiba TH58NVG6D2FLA89
3. Micron MT29F2G08ABAEAWP

These alternative models offer similar specifications and functionality to the MT29F2T08CTCCBJ7-6C:C TR, providing options for different sourcing and compatibility requirements.

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