MT29F2G16ABBEAM69A3WC1

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity (2 gigabits)
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: NAND Flash memory
• Packaging/Quantity: Single chip

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F2G16ABBEAM69A3WC1
• Density: 2 Gb (gigabits)
• Organization: 256M x 8 (8-bit I/O)
• Voltage Supply: 2.7V - 3.6V
• Interface: Toggle Mode DDR NAND
• Operating Temperature: -40°C to +85°C
• Speed: Up to 200 MB/s (megabytes per second)
• Endurance: 3000 Program/Erase cycles

Detailed Pin Configuration

The MT29F2G16ABBEAM69A3WC1 has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | Power supply voltage for I/O | | 3 | RE# | Read Enable | | 4 | WE# | Write Enable | | 5 | CLE | Command Latch Enable | | 6 | ALE | Address Latch Enable | | 7-14 | A[0:7] | Address Inputs | | 15-22 | DQ[0:7] | Data Inputs/Outputs | | 23 | R/B# | Ready/Busy | | 24 | CE# | Chip Enable | | 25-32 | NC | No Connection | | 33-40 | DQ[8:15] | Data Inputs/Outputs | | 41-48 | NC | No Connection |

Functional Features

• Toggle Mode DDR NAND interface for high-speed data transfer
• Error Correction Code (ECC) for data integrity
• Block Management and Wear Leveling algorithms for efficient usage of memory cells
• Bad Block Management to handle defective blocks
• Power Loss Protection mechanism to prevent data loss during power failure

Advantages

• High storage capacity allows for storing large amounts of data
• Non-volatile memory retains data even when power is disconnected
• Low power consumption extends battery life in portable devices
• Fast data transfer speeds enhance device performance
• Reliable ECC ensures data integrity

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabit compared to some alternatives
• BGA package may require specialized equipment for installation or replacement

Working Principles

The MT29F2G16ABBEAM69A3WC1 is based on NAND Flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. The Toggle Mode DDR NAND interface enables high-speed data transfer between the memory chip and the host device.

Detailed Application Field Plans

The MT29F2G16ABBEAM69A3WC1 is commonly used in various electronic devices that require non-volatile data storage, such as: - Smartphones and tablets - Solid State Drives (SSDs) - Digital cameras - Portable media players - Industrial control systems

Detailed and Complete Alternative Models

• MT29F2G08ABAEAWP-IT: 2 Gb NAND Flash memory chip with different pin configuration
• MT29F2G16ABBEAH4-IT:E: 2 Gb NAND Flash memory chip with extended temperature range
• MT29F2G16ABBEAHC-IT: 2 Gb NAND Flash memory chip with higher endurance

These alternative models offer similar functionality and can be used as replacements for the MT29F2G16ABBEAM69A3WC1 in specific applications.

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