Micron Technology Inc.
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MT29F2G08ABAGAM79A3WC1

MT29F2G08ABAGAM79A3WC1

Basic Information Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High capacity (2GB)
    • NAND Flash technology
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and efficient data storage solution
  • Packaging/Quantity: Single chip

Specifications

  • Manufacturer: Micron Technology Inc.
  • Model: MT29F2G08ABAGAM79A3WC1
  • Memory Type: NAND Flash
  • Capacity: 2GB
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package Dimensions: 14mm x 18mm
  • Pin Count: 48

Detailed Pin Configuration

The MT29F2G08ABAGAM79A3WC1 chip has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Wear-leveling algorithm for extended lifespan
  • Block management for efficient data organization
  • Bad block management for improved reliability

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast data transfer speeds - Reliable and durable - Suitable for various electronic devices

Disadvantages: - Higher cost compared to other memory options - Limited write endurance

Working Principles

The MT29F2G08ABAGAM79A3WC1 chip utilizes NAND Flash technology to store data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the charge level on the floating gate. When data is written, the charge level is adjusted, and when data is read, the charge level is measured to determine the stored value.

Detailed Application Field Plans

The MT29F2G08ABAGAM79A3WC1 chip finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

  • MT29F2G16ABAEAWP-IT:E - 2GB NAND Flash Memory, TSOP package
  • S34ML02G100TFI000 - 2GB NAND Flash Memory, BGA package
  • K9F2G08U0M-YCB0 - 2GB NAND Flash Memory, TSOP package
  • IS37SML01G1-XBVA1 - 2GB NAND Flash Memory, BGA package
  • HY27UF082G2M-TPIB - 2GB NAND Flash Memory, TSOP package

(Note: The above alternative models are provided for reference and may have different specifications and pin configurations. Please refer to the respective datasheets for detailed information.)

Word Count: 450

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F2G08ABAGAM79A3WC1 v technických řešeních

  1. What is the maximum operating temperature of MT29F2G08ABAGAM79A3WC1?
    - The maximum operating temperature of MT29F2G08ABAGAM79A3WC1 is 85°C.

  2. What is the typical power consumption of MT29F2G08ABAGAM79A3WC1 during read operations?
    - The typical power consumption of MT29F2G08ABAGAM79A3WC1 during read operations is 25mA.

  3. Can MT29F2G08ABAGAM79A3WC1 be used in automotive applications?
    - Yes, MT29F2G08ABAGAM79A3WC1 is suitable for automotive applications.

  4. What is the voltage range for programming MT29F2G08ABAGAM79A3WC1?
    - The voltage range for programming MT29F2G08ABAGAM79A3WC1 is 2.7V to 3.6V.

  5. Does MT29F2G08ABAGAM79A3WC1 support hardware data protection features?
    - Yes, MT29F2G08ABAGAM79A3WC1 supports hardware data protection features.

  6. What is the maximum erase cycle endurance of MT29F2G08ABAGAM79A3WC1?
    - The maximum erase cycle endurance of MT29F2G08ABAGAM79A3WC1 is 100,000 cycles.

  7. Is MT29F2G08ABAGAM79A3WC1 compatible with standard NAND flash interfaces?
    - Yes, MT29F2G08ABAGAM79A3WC1 is compatible with standard NAND flash interfaces.

  8. What is the typical page program time for MT29F2G08ABAGAM79A3WC1?
    - The typical page program time for MT29F2G08ABAGAM79A3WC1 is 200μs.

  9. Can MT29F2G08ABAGAM79A3WC1 be used in industrial control systems?
    - Yes, MT29F2G08ABAGAM79A3WC1 is suitable for use in industrial control systems.

  10. What is the data retention period of MT29F2G08ABAGAM79A3WC1?
    - The data retention period of MT29F2G08ABAGAM79A3WC1 is 10 years.