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MT29F2G08ABAGAH4-IT:G
Product Overview
Category
MT29F2G08ABAGAH4-IT:G belongs to the category of NAND Flash Memory.
Use
This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High storage capacity: The MT29F2G08ABAGAH4-IT:G offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
- Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
- Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
- Low power consumption: The MT29F2G08ABAGAH4-IT:G is energy-efficient, consuming minimal power during operation.
- Compact package: This NAND flash memory comes in a small form factor, making it suitable for space-constrained devices.
- Durable design: It is built to withstand shocks, vibrations, and temperature variations, ensuring data integrity even in challenging environments.
Package and Quantity
The MT29F2G08ABAGAH4-IT:G is available in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.
Specifications
- Storage Capacity: 2 GB
- Interface: NAND
- Supply Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Data Transfer Rate: Up to 200 megabytes per second (MB/s)
- Erase/Program Cycles: 10,000 cycles
Pin Configuration
The detailed pin configuration of MT29F2G08ABAGAH4-IT:G is as follows:
- VCC
- ALE
- CLE
- CE#
- RE#
- WE#
- R/B#
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- GND
Functional Features
- Page Read/Program/Erase Operations: The MT29F2G08ABAGAH4-IT:G supports efficient page-level read, program, and erase operations.
- Block Management: It incorporates advanced block management algorithms to optimize data storage and improve performance.
- Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to detect and correct errors, ensuring data integrity.
- Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, extending its lifespan.
- Bad Block Management: It includes mechanisms to identify and manage bad blocks, preventing data loss and maintaining reliability.
Advantages and Disadvantages
Advantages
- High storage capacity allows for extensive data storage.
- Fast data transfer rate enables quick access to stored information.
- Low power consumption prolongs battery life in portable devices.
- Compact package facilitates integration into small form factor devices.
- Durable design ensures data integrity in challenging environments.
Disadvantages
- Limited erase/program cycles may affect the lifespan of the product.
- Higher cost compared to other types of memory technologies.
- Relatively slower write speeds compared to some alternative models.
Working Principles
The MT29F2G08ABAGAH4-IT:G utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the controller applies voltages to specific cells and measures the resulting current to determine the stored value. During programming or erasing, the controller adjusts the charge on the floating gates to modify the stored data.
Detailed Application Field Plans
The MT29F2G08ABAGAH4-IT:G is widely used in various electronic devices that require non-volatile storage for data retention. Some common application fields include:
- Smartphones and tablets
- Digital cameras and camcorders
- Solid-state drives (SS
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F2G08ABAGAH4-IT:G v technických řešeních
1. What is the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G is a specific model of NAND flash memory chip manufactured by Micron Technology.
2. What is the capacity of the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G has a capacity of 2 gigabytes (GB).
3. What is the interface used by the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G uses a standard NAND flash interface.
4. What are some common applications for the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G is commonly used in various technical solutions, including embedded systems, consumer electronics, automotive applications, and industrial equipment.
5. What is the operating voltage range of the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G operates within a voltage range of 2.7V to 3.6V.
6. What is the maximum data transfer rate supported by the MT29F2G08ABAGAH4-IT:G?
The MT29F2G08ABAGAH4-IT:G supports a maximum data transfer rate of up to 52 megabytes per second (MB/s).
7. Does the MT29F2G08ABAGAH4-IT:G support wear-leveling algorithms?
Yes, the MT29F2G08ABAGAH4-IT:G supports wear-leveling algorithms, which help distribute data evenly across the memory cells to extend the lifespan of the flash memory.
8. Can the MT29F2G08ABAGAH4-IT:G operate in extreme temperature conditions?
Yes, the MT29F2G08ABAGAH4-IT:G is designed to operate reliably in a wide range of temperature conditions, including both high and low temperatures.
9. Is the MT29F2G08ABAGAH4-IT:G compatible with various operating systems?
Yes, the MT29F2G08ABAGAH4-IT:G is compatible with different operating systems, including Linux, Windows, and other embedded operating systems.
10. Does the MT29F2G08ABAGAH4-IT:G support hardware encryption?
No, the MT29F2G08ABAGAH4-IT:G does not have built-in hardware encryption capabilities. Encryption would need to be implemented at the software level if required.